Resistive Switching: Physically Transient Resistive Switching Memory Based on Silk Protein (small 20/2016)

Hong Wang,Bowen Zhu,Xiaohua Ma,Yue Hao,Xiao Chen
DOI: https://doi.org/10.1002/smll.201670104
IF: 13.3
2016-01-01
Small
Abstract:On page 2715, physically transient resistive switching memory based on silk fibroin is demonstrated by Y. Hao, X. Chen, and co-workers. The memory devices can be absolutely dissolved in deionized water or phosphate-buffered saline in 2 hours. The transient devices have the potential for application in secure data storage systems and biocompatible electronics.
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