Abstract:Resistive random-access memory has attracted tremendous attention and numerous investigations as a promising next-generation nonvolatile memory device to address the physical limits of flash memory. Particularly, physically transient resistive switching memory is intensively researched for its degradable and environmentally friendly characteristics. Zinc oxide ($\mathrm{Zn}\mathrm{O}$), as a low-cost biocompatible and biodegradable material, has been widely used in the dielectric layer, yet many previous studies on $\mathrm{Zn}\mathrm{O}$-based memory devices show unsatisfactory switching properties. In this work, ${\mathrm{Mo}\mathrm{S}}_{2}$ quantum dots (QDs) are added between the $\mathrm{W}$ bottom electrode and $\mathrm{Zn}\mathrm{O}$ insulator by spin coating ($\mathrm{W}/{\mathrm{Mo}\mathrm{S}}_{2}$ QD$/\mathrm{Zn}\mathrm{O}/\mathrm{Ag}$) to improve its resistive switching behavior. The modified device exhibits distinctly better properties, including more-uniform switching parameters (low- and high-resistance states, ${V}_{\mathrm{set}}$, ${V}_{\mathrm{reset}}$), ultralow threshold voltages, and steady retention. Moreover, we transfer the device onto polyvinyl alcohol substrate, making it fully degradable, and it is completely dissolved in phosphate-buffered solution after 40 min. These results indicate that the ${\mathrm{Mo}\mathrm{S}}_{2}$ QD--optimized transient resistive switching memory shows great potential in green electronics, implantable biomedical devices, and secure information-storage applications.

ZnO-Based Physically Transient and Bioresorbable Memory on Silk Protein

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Dissolvable and Biodegradable Resistive Switching Memory Based on Magnesium Oxide

Transient and Biocompatible Resistive Switching Memory Based on Electrochemically‐Deposited Zinc Oxide

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Resistive Switching: Physically Transient Resistive Switching Memory Based on Silk Protein (small 20/2016)

Solution-Processed Physically Transient Resistive Memory Based on Magnesium Oxide

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Physically Transient Resistive Switching Memory with Material Implication Operation

Transient Resistive Switching Devices Made from Egg Albumen Dielectrics and Dissolvable Electrodes

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A Silk Fibroin Bio-Transient Solution Processable Memristor

Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications

Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.

Ultrafast Degradable Resistive Switching Memory Based on Α-Lactose Thin Films

Low Power Consumption Bipolar Resistive Switching Characteristics of ZnO-based Memory Devices

Flexible and recyclable bio-based transient resistive memory enabled by self-healing polyimine membrane

Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices

Metal/ZnO/MgO/Si/Metal Write-Once-Read-Many-Times Memory

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Fabrication of Carboxymethyl Cellulose and Graphene Oxide Bio-Nanocomposites for Flexible Nonvolatile Resistive Switching Memory Devices.