Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Fermi-level pinning theory for van der Waals metal-semiconductor junctions

Fermi-level depinning in metal-2D multilayered semiconductor junctions

Metal-2D multilayered semiconductor junctions: layer-number dependent Fermi-level pinning

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Revealing the Weak Fermi Level Pinning Effect of 2D Semiconductor/2d Metal Contact: A Case of Monolayer In2Ge2Te6 and Its Janus Structure In2Ge2Te3Se3

Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier

Charge distribution at metal-multilayered semiconductor interfaces

Fermi-level depinning of 2D transition metal dichalcogenide transistors

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

Mechanism of Charge Redistribution at the Metal-Semiconductor and Semiconductor-Semiconductor Interfaces of Metal-Bilayer MoS2 Junctions.

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Ferroelectric metals in van der Waals bilayers

Wafer-scale and universal van der Waals metal semiconductor contact

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts