Abstract:The absence of intrinsic magnetism in two-dimensional (2D) materials demands the functionalization as a necessity towards broadening their applications. In this work, doping with transition metals (Mn and Fe) is proposed to modify the electronic and magnetic properties of GeS2 monolayer. Pristine monolayer is an indirect gap semiconductor with energy gap of 0.73(1.47) eV computed by PBE(HSE06) functional. Significant magnetism with a total magnetic moment of 1.18 μB emerges in GeS2 monolayer upon creating a single Ge vacancy, which is produced mainly by six nearest neighboring S atoms. In this case, the monolayer is metallized with S-px,y states as responsible. Similarly, the magnetization of GeS2 monolayer is also achieved by doping with Mn and Fe atoms with total magnetic moments of 3.00 and 3.78 μB, respectively. The calculated band structures assert that the magnetic semiconductor nature with spin-up/spin-down gap of 0.72/0.53 eV is induced by Mn impurity, while doping with Fe atom leads to the monolayer metallization. Being surrounded by more electronegative S atoms, Mn and Fe impurities lose charge amounts of 1.19 and 1.11 e, respectively. Further investigations on spin coupling indicate the antiferromagnetic semiconductor nature in Mn- and Fe-doped systems, regardless the distance between impurities. Our results provide important insights into the effects of doping into GeS2 monolayer, which demonstrate that the doped systems hold promise for spintronic applications.

Electrically Controllable Magnetic Properties of Fe-doped GaSe Monolayer

Magnetic modification of GaSe monolayer by absorption of single Fe atom

Tuning the Electronic, Optical, and Magnetic Properties of Monolayer GaSe with a Vertical Electric Field

γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism

Modifications of Magnetic Anisotropy of Fe3GeTe2 by the Electric Field Effect

Controllable magnetic anisotropy and ferroelasticity in superconducting FeSe monolayer with surface fluorine adsorption

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Modification of the Electronic and Spintronic Properties of Monolayer GaGeTe with a Vertical Electric Field

Antiferromagnetic semiconductor nature inGeS2monolayer doped with Mn and Fe transition metals

Magnetoelectric Effects in Ferromagnetic Metal Monolayers

Functionalization of a GaSe Monolayer by Vacancy and Chemical Element Doping

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

Understanding and tuning magnetism in layered Ising-type antiferromagnet FePSe3 for potential 2D magnet

Valence mediated tunable magnetism and electronic properties by ferroelectric polarization switching in 2D FeI<sub>2</sub>/In<sub>2</sub>Se<sub>3</sub> van der Waals heterostructures

Composition‐Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe5Se8 to Metallic Fe3Se4 Nanosheets

First-principles study of a Mn-doped In 2 Se 3 monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

First-principles study of a Mn-doped In<sub>2</sub>Se<sub>3</sub> monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2.

Valence mediated tunable magnetism and electronic properties by ferroelectric polarization switching in 2D FeI/InSe van der Waals heterostructures.