Abstract:Spintronics strives to revolutionize conventional electronics by integrating magnetic materials with semiconductor devices, such as the spin field effect transistor (SFET), which not only improve the capabilities of electronic devices, but develop new functionalities. For electrodes of spin injection and detection in SFET device, half metallic Fe 3 O 4 is an attractive candidate because its high Curie temperature of 858 K, large spin polarization near 100% at the Fermi level and relatively high electronic conductivity at room temperature, which is believed to benefit the injection of spin carriers into the semiconductors. For ferromagnetic metal(FM)/Semiconductor system, Fe 3 O 4 /GaAs is a very promising system for the fabrication of magnetoelectronic devices due to the Schottky contact of the Fe 3 O 4 /GaAs interface, which is crucial for studying the behaviors of spin dependent transportation for the devices. It is reported that in a FM/I/NM/I/FM double tunnel junction, where NM is the normal metal, and I the insulating barrier, theories predicted an oscillation of the tunneling magnetoresistance (TMR) effect as a function of the NM layer thickness because the spin polarization of the tunneling electron oscillates as a result of the resonant tunneling. Furthermore, Quantum oscillation of spin polarization in GaAs channel was experimentally demonstrated. In this paper, we have presented a theoretical approach to the tunneling conductance and TMR in a Fe 3 O 4 /GaAs/Fe 3 O 4 magnetic double tunnel junction with both ballistic and diffusive components.

Ferromagnetism in heavily Fe-doped GaAs: a DFT study

Magneto-optical properties of heavily Fe-doped GaAs: a density functional approach

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Electronic and magnetic properties of Fe-doped GaN: first-principle calculations

Electronic correlations in FeGa$_3$ and the effect of hole doping on its magnetic properties

Ferromagnetic Quantum Critical Point in FeGa3 Tuned by Mixed-Valence Fe Dimers

Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures

Towards a Fully Ab-Initio Description of the Diluted Magnetic Semiconductor $Ga_{1-x}Mn_{x}As$. Ferromagnetism, Electronic Structure, and Optical Response

Oscillatory Tunneling Magnetoresistance In Fe3o4/Gaas/Fe3o4 Junction

First Principles Calculations of Fe on GaAs (100)

Large-scale First-Principles Determination of Anisotropic Mechanical Properties of Magnetostrictive Fe–Ga Alloys

Tuning the magnetic properties of van der Waals Fe3GaTe2 crystals by Co doping

Sub-THz High Spin Precession Frequency in van der Waals Ferromagnet Fe3GaTe2

Enhanced Magnetic Interaction between Ga and Fe in Two-Dimensional van der Waals Ferromagnetic Crystal Fe<sub>3</sub>GaTe<sub>2</sub>

Effect of Ga excess concentration on the structural, electronic, magnetic, elastic and thermoelectric properties of Fe2−xNiGa1+x Heusler alloys: results of FP-LAPW calculations

Electronic Structures, Born Effective Charges and Spontaneous Polarization in Magnetoelectric Gallium Ferrite

Oscillatory tunneling magnetoresistance in Fe<inf>3</inf>O<inf>4</inf>/GaAs/Fe<inf>3</inf>O<inf>4</inf> junction

Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys

Modulation of Ferromagnetism Through Electron Doping in Pd-Doped Β-Ga2o3

Spin dynamics of FeGa$_{3-x}$Ge$_x$ studied by Electron Spin Resonance

Ferromagnetism with above-room-temperature Curie temperature in Fe-doped β-Ga 2 O 3 studied by first-principles calculations