Thickness dependent electrical resistivity in amorphous Mg-Zn-Ca thin films

Y. Fu,Q.P. Cao,X.D. Wang,D.X. Zhang,J.Z. Jiang
DOI: https://doi.org/10.1016/j.tsf.2019.01.026
IF: 2.1
2019-01-01
Thin Solid Films
Abstract:Electrical resistivity in amorphous Mg65Zn30Ca5 thin films with thicknesses ranging from 49 nm to 1786 nm is investigated by four-probe method at 4–300 K. It is revealed that for thickness from 94 nm to 1786 nm the Ziman-Faber diffraction model can describe temperature-dependent electrical resistivity, while for 49 nm-thick film the two-level system scattering mechanism is validated below 40 K and Ziman-Faber diffraction model above 40 K. More interface fraction between the columnar structures with enhanced heterogeneity could be the possible origin of two-level system scattering in thinnest film, instead of denser atomic packing.
What problem does this paper attempt to address?