Abstract:A wideband low-noise amplifier (LNA) featuring transformer-based wideband input matching is proposed for millimeter-wave applications. By analyzing the properties of conventional series input matching networks, which were widely employed in narrowband LNAs and shunt-series matching networks for bandwidth extension, a novel input matching network possessing the merits of both was proposed. For further bandwidth extension, another peak of input impedance at a higher frequency is introduced for the proposed input matching network. Moreover, it is proved that the proposed input matching network can suppress the gate resistor noise, resulting in significant noise figure (NF) improvement of an LNA. On the other hand, the NF is further reduced by connecting a transformer between the two amplification stages, which helps suppress the noise contribution from the second stage, leading to an LNA design with NF lower than 4.5 dB over a very wide operating bandwidth. To enhance the gain bandwidth, the peak distribution, including both shunt peaking and series peaking, is discussed. By appropriately distributing these peaks, which is also known as the pole-tuning technique, a wider gain bandwidth can be obtained. To validate the proposed techniques, an LNA with two common-source (CS) stages is designed and fabricated using a 65-nm CMOS process, and the overall chip size, including all pads, is only 0.26 mm². The two CS stages are cascoded for dc biasing to reduce the power consumption. Experimental results show that a peak gain of 13.5 dB is achieved within a -3-dB bandwidth from 19.2 to 42.6 GHz. The measured NF is 3.1-4.5 dB, and the input 1-dB gain compression point (IP1 dB) ranges from -13.54 to -9.89 dBm in the entire gain bandwidth. The input return loss S₁₁ is less than -10 dB over a frequency range of 16.8-38.9 GHz. Moreover, benefiting from the current-reuse technique, the power consumption of the LNA is only 6.36-mW.

A High Linearity Wideband LNA with an Excellent Gain Flatness for S-band Application

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

The Design of Broadband LNA with Active Biasing Based on Negative Technique

A 11.2 Mw 48–62 GHz Low Noise Amplifier in 65 Nm CMOS Technology

A 6.5-12 GHz Balanced Variable Gain Low-Noise Amplifier with Frequency-Selective Non-Foster Gain Equalization Technique

Design of broadband LNA with active biasing using negative feedback technique

A 6.512-GHz Balanced Variable-Gain Low-Noise Amplifier With Frequency-Selective Gain Equalization Technique

A Broadband Low Noise Amplifier with High Gain

A 0.08&#x2013;3ghz High Gain UWB LNA with Improved Flatness

A 18–44 GHz Low Noise Amplifier with Input Matching and Bandwidth Extension Techniques

Design of Ultra-Wideband LNA with 3.6 ± 0.4 Db NF and 15.9 ± 1.1 Db Gain

Design of K-band Compact Wideband Low Noise Amplifier

A Compact Wideband CMOS Low Noise Amplifier With Gain Flatness Enhancement

A high-gain wideband balun-LNA with multiple noise-optimized technique

A 19–31ghz K/Ka-band Broadband Low Noise Amplifier with High Gain and High Flatness

A 7.2–27.3 GHz CMOS LNA With 3.51 ±0.21 dB Noise Figure Using Multistage Noise Matching Technique

A Wideband CMOS LNA Using Transformer-Based Input Matching and Pole-Tuning Technique

A Full W-Band InP LNA With Enhanced Gain Flatness

Design and implementation of ultra-broad band low noise amplifier with frequency coverage from 0.03 to 4.5GHz

A Broadband CMOS LNA for WLAN Applications