Abstract:The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate superjunction (DTSJ), conventional trench gate superjunction (CTSJ), conventional trench gate (CT), and conventional planar gate (CT) SiC VDMOS are comprehensively analyzed and simulated. Extensive simulations demonstrate the maximum SET current peaks of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS, which are 188 mA, 218 mA, 242 mA, and 255 mA, with a bias voltage VDS of 300 V and LET = 120 MeV·cm2/mg, respectively. The total charges of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS collected at the drain are 320 pC, 1100 pC, 885 pC, and 567 pC, respectively. A definition and calculation of the charge enhancement factor (CEF) are proposed. The CEF values of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS are 43, 160, 117, and 55, respectively. Compared with CTSJ−, CT−, and CP SiC VDMOS, the total charge and CEF of the DTSJ SiC VDMOS are reduced by 70.9%, 62.4%, 43.6% and 73.1%, 63.2%, and 21.8%, respectively. The maximum SET lattice temperature of the DTSJ SiC VDMOS is less than 2823 K under the wide operating conditions of a drain bias voltage VDS ranging from 100 V to 1100 V and a LET value ranging from 1 MeV·cm2/mg to 120 MeV·cm2/mg, while the maximum SET lattice temperatures of the other three SiC VDMOS significantly exceed 3100 K. The SEGR LET thresholds of DTSJ−, CTSJ−, CT−, and CP SiC VDMOS are approximately 100 MeV·cm2/mg, 15 MeV·cm2/mg, 15 MeV·cm2/mg, and 60 MeV·cm2/mg, respectively, while the value of VDS = 1100 V.

Characteristics and Reliability of VDMOS under Capacitive Loads

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design

Failure Analysis of the VDMOS Device with Vsd and Rds (on) Exceeded Limit Based on Reliability Physics

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Temperature-dependent Device Behavior in Advanced CMOS Technologies

The Optimization of the Specific On-Resistance of the Vdmos on the Integrated Platform of Vdmos and Ldmos

Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Calculation and Analysis of the Dynamic Turn-on Process of SiC MOSFET Based on a Piecewise Linearization Method

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

Scalability And Reliability Characteristics Of Cvd Hfo2 Gate Dielectrics With Hfn Electrodes For Advanced Cmos Applications

ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect

A investigation into X-ray radiation of VDMOS

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology