Intrinsically Low Thermal Conductivity In Bisbse3: A Promising Thermoelectric Material With Multiple Conduction Bands

Xiaoying Liu,Dongyang Wang,Haijun Wu,Jinfeng Wang,Yang Zhang,Guangtao Wang,Stephen J. Pennycook,Li‐Dong Zhao

DOI: https://doi.org/10.1002/adfm.201806558

IF: 19

2019-01-01

Advanced Functional Materials

Abstract:Bi2Se3, as a Te-free alternative of room-temperature state-of-the-art thermoelectric (TE) Bi2Te3, has attracted little attention due to its poor electrical transport properties and high thermal conductivity. Interestingly, BiSbSe3, a product of alloying 50% Sb on Bi sites, shows outstanding electron and phonon transports. BiSbSe3 possesses orthorhombic structure and exhibits multiple conduction bands, which can be activated when the carrier density is increased as high as approximate to 3.7 x 10(20) cm(-3) through heavily Br doping, resulting in simultaneously enhancing the electrical conductivities and Seebeck coefficients. Meanwhile, an extremely low thermal conductivity (approximate to 0.6-0.4 W m(-1) K-1 at 300-800 K) is found in BiSbSe3. Both first-principles calculations and elastic properties measurements show the strong anharmonicity and support the ultra-low thermal conductivity of BiSbSe3. Finally, a maximum dimensionless figure of merit ZT similar to 1.4 at 800 K is achieved in BiSb(Se0.94Br0.06)(3), which is comparable to the most n-type Te-free TE materials. The present results indicate that BiSbSe3 is a new and a robust candidate for TE power generation in medium-temperature range.