Abstract:p-Type hydrogenated silicon carbide (p-SiC:H) films were prepared using plasma-enhanced chemical vapor deposition by systematically incorporating carbon into nanocrystalline silicon networks. The carbon content of the films was varied by adjusting the methane/silane (CH4/SiH4; R-c) ratio. The chemical bonding, micro structural, and electro-optical properties of the films were investigated in detail. With increasing R-c,R-, the silicon carbon bond density in the films increased gradually and the overall microstructure became amorphous. Through sophisticated control of the carbon content of the films during high hydrogen dilution deposition, p-type hydrogenated nanocrystalline SiC:H (p-nc-SiC:H) films with nanometer-scale Si crystallites embedded in an amorphous SiC:H matrix were obtained. The p-nc-SiC:H films had wide bandgaps larger than 2 eV and reduced parasitic light absorption at wavelengths below 550 nm. When using wide-bandgap p-nc-SiC:H films with superior electro-optical properties as window layers in n-i-p flexible and p-i-n semi-transparent nc-Si:H solar cells, in place of conventional p-nc-Si:H layers with narrow bandgaps, enhanced cell performance was achieved because of both high open circuit voltage (V-oc) and high quantum efficiency values at short wavelengths of 350-550 nm. The conversion efficiencies of the flexible nc-Si:H solar cells increased from 6.37% (V-oc = 0.41 V, J(sc) = 22.81 mA/cm(2), and FF = 68.10%, where Jsc is the short-circuit current density and FF is the fill factor, respectively) to 7.89% (Voc = 0.51 V, J(sc) = 24.04 mA/cm(2), and FF = 64.37%). A further increase in the conversion efficiency to 9.18% was obtained by inserting a very thin, highly-doped p-nc-SiC:H buffer layer between a low-doped p-nc-SiC:H window layer and an indium tin oxide front contact. A significant increase in the conversion efficiency from 3.66% (V-oc = 0.42 V, J(sc) = 14.83 mA/cm(2), and FF = 58.69%) to 4.33% (V-oc = 0.45 V, J(sc) = 17.74 mA/cm(2), and FF = 54.18%) was achieved with the semi-transparent nc-Si:H solar cell, with an average optical transmittance of 17.29% in the visible wavelength region of 500-800 nm.

Widening Bandgap of I/n-a-si:H Window Layers Via Hydrogen Injection in Cat-CVD for SHJ Solar Cells

Optimized N-Type Amorphous Silicon Window Layers Via Hydrogen Dilution For Silicon Heterojunction Solar Cells By Catalytic Chemical Vapor Deposition

Role of Hydrogen in Modifying A-Si:H/c-si Interface Passivation and Band Alignment for Rear-Emitter Silicon Heterojunction Solar Cells

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Improved Interface Microstructure Between Crystalline Silicon and Nanocrystalline Silicon Oxide Window Layer of Silicon Heterojunction Solar Cells

Improving the performance of high-efficiency silicon heterojunction solar cells through low-temperature deposition of an i-a-Si:H anti-epitaxial buffer layer

Controllable A-Si:H/c-si Interface Passivation by Residual SiH4 Molecules in H-2 Plasma

Microcrystalline Silicon‐carbon Alloys As Anti‐reflection Window Layers in High Efficiency Thin Film Silicon Solar Cells

Damp-Heat-Stable, High-Efficiency, Industrial-Size Silicon Heterojunction Solar Cells

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

Underdense A-Si:H Film Capped by A Dense Film As the Passivation Layer of A Silicon Heterojunction Solar Cell

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

25.11% efficiency silicon heterojunction solar cell with low deposition rate intrinsic amorphous silicon buffer layers

Enhancement of Short-Circuit Current Density in Silicon Heterojunction Solar Cells by Hydrogenated Multiple-Doped In2O3 Thin Films

Beyond 25% efficient crystalline silicon heterojunction solar cells with hydrogenated amorphous silicon oxide stacked passivation layers for rear emitter

Prolonged Annealing Improves Hole Transport of Silicon Heterojunction Solar Cells

Single‐Side Heterojunction Solar Cell with Microcrystalline Silicon Oxide Emitter and Diffused Back Surface Field

Wide-bandgap Nanocrystalline Silicon-Carbon Alloys for Photovoltaic Applications

A Method to Slow Down the Etching of Hydrogen Plasma Pretreatment and Improve Passivation in Silicon Heterojunction Solar Cells

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Effect of A-Si : H Interface Buffer Layer on the Performance of Hydrogenated Amorphous Silicon Germanium Thin Film Solar Cell