Single-crystal GaN Layer Converted from Β-Ga2o3films and Its Application for Free-Standing GaN

Yuewen Li,Xiangqian Xiu,Zening Xiong,Xuemei Hua,Zili Xie,Peng Chen,Bin Liu,Tao,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1039/c8ce01336e

2019-01-01

Abstract:Hexagonal GaN has been obtained by nitridating β-Ga2O3film despite structural mismatch between β-Ga2O3and GaN, and the conversion process has been investigated systematically.

What problem does this paper attempt to address?

Single-crystal GaN layer converted from β-Ga<sub>2</sub>O<sub>3</sub> films and its application for free-standing GaN

Yuewen Li,Xiangqian Xiu,Zening Xiong,Xuemei Hua,Zili Xie,Peng Chen,Bin Liu,Tao Tao,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1039/c8ce01336e

IF: 3.756

2019-01-01

CrystEngComm

Abstract:Hexagonal GaN has been obtained by nitridating β-Ga2O3 film despite structural mismatch between β-Ga2O3 and GaN, and the conversion process has been investigated systematically.
Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga2O3

Yuewen Li,Xiangqian Xiu,Zhitai Jia,Duo Liu,Xuemei Hua,Zili Xie,Tao Tao,Peng Chen,Bin Liu,Xutang Tao,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1016/j.spmi.2018.12.024

IF: 3.22

2019-01-01

Superlattices and Microstructures

Abstract:We report here the preparation of porous single-crystal GaN films by direct top-down high temperature nitridation of β-Ga2O3. It is found that, although the crystallographic orientations of the original β-Ga2O3 samples are different, the GaN films converted from both bulk (200) β-Ga2O3 single crystal and (−201) β-Ga2O3 film have the same (0002) orientation and show no obvious stress. And we also found that the crystal quality of converted GaN strongly depends on the crystal quality of β-Ga2O3. In particular, we have successfully converted β-Ga2O3 film entirely to single-crystal GaN porous film on sapphire, and the self-separation happens naturally between the porous GaN film and sapphire.
Study on the Nitridation of Β-Ga2o3 Films*

Fei Cheng,Yue-Wen Li,Hong Zhao,Xiang-Qian Xiu,Zhi-Tai Jia,Duo Liu,Xue-Mei Hua,Zi-Li Xie,Tao,Peng Chen,Bin Liu,Rong Zhang,You-Dou Zheng

DOI: https://doi.org/10.1088/1674-1056/28/8/088103

2019-01-01

Abstract:Single-crystal GaN layers have been obtained by nitriding β-Ga2O3 films in NH3 atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted GaN porous films show the single-crystal structures and low-stress, which can be used as templates for the epitaxial growth of high-quality GaN.
Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Ting Liang,Jianjun Tang,Jijun Xiong,Yong Wang,Chenyang Xue,Xujun Yang,Wendong Zhang

DOI: https://doi.org/10.1016/j.vacuum.2010.01.054

2011-01-01

Abstract:Hexagonal-GaN heteroepitaxy layers have been grown on Si(111)substrate by MOCVD.The structure,morphology and optical properties of GaN epilayer is analyzed and characterized by various analysis method such as optical microscope,AFM,SEM,X-ray diffraction(XRD),and Raman spectra,etc.Test results show that the crystal reveals the wurtzite structure with the(0002)crystal orientation and the heteroepitaxial growth of GaN has good single crystal quality,good directing property,smooth surface without crack.The Raman peaks of E2(high)and A1(LO)phonon mode have red shift according to relaxed GaN,which might be related to the tensile stress in GaN layer.But the AO phonon mode of Si have blue shift as its eigen frequency which shows the Si substrate suffered compressive stress.
Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Jijun Xiong,Jianjun Tang,Ting Liang,Yong Wang,Chenyang Xue,Weili Shi,Wendong Zhang

DOI: https://doi.org/10.1016/j.apsusc.2010.07.073

IF: 6.7

2010-01-01

Applied Surface Science

Abstract:GaN have sphalerite structure (Cubic-GaN) and wurtzite structure (hexagonal GaN). We report the H-GaN epilayer with a LT-AlN buffer layer has been grown on Si(111) substrate by metal-organic chemical vapor deposition (MOCVD). According to the FWHM values of 0.166° and 14.01cm−1 of HDXRD curve and E2 (high) phonon of Raman spectrum respectively, we found that the crystal quality is perfect. And based on the XRD spectrum, the crystal lattice constants of Si (a=5.3354Ǻ) and H-GaN (aepi=3.214Ǻ, cepi=5.119Ǻ) have been calculated for researching the tetragonal distortion of the sample. These results indicate that the GaN epilayer is in tensile strain and Si substrate is in compressive strain which were good agreement with the analysis of Raman peaks shift. Comparing with typical values of screw-type (Dscrew=7×108cm−2) and edge-type (Dedge=2.9×109cm−2) dislocation density, which is larger than that in GaN epilayers growth on SiC or sapphire substrates. But our finding is important for the understanding and application of nitride semiconductors.
The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Qiubo Li,Guangxia Liu,Shouzhi Wang,Lei Liu,Jiaoxian Yu,Guodong Wang,Peng Cui,Shiying Zhang,Xiangang Xu,Lei Zhang

DOI: https://doi.org/10.1016/j.surfin.2024.105554

IF: 6.2

2024-01-01

Surfaces and Interfaces

Abstract:GaN has attracted much attention as an important wide bandgap semiconductor. In this paper, GaN films are grown directly on GaN substrates with completely different characteristics, and it is found that the quality, surface roughness, stress and other characteristics of GaN films are directly related to GaN substrates. The smaller the warpage and roughness of wafer, the smaller the warpage and surface roughness of GaN film obtained by homo-epitaxy. Alkali etching and multiphoton photoluminescence (MPPL) reveal dislocations in GaN substrate and homo-epitaxial samples. It was also found that there is a relationship between the strain of the GaN epitaxial layer and the strain of the substrate. Finally, the basic performance of the GaN based HEMT device was demonstrated. This study can provide reference for growing higher quality and less defective GaN films, which will be beneficial for further applications of more stable and high performance GaN-based devices.
Continuous Single‐Crystalline GaN Film Grown on WS2‐Glass Wafer (Small 41/2022)

Yue Yin,Bingyao Liu,Qi Chen,Zhaolong Chen,Fang Ren,Shuo Zhang,Zhetong Liu,Rong Wang,Meng Liang,Jianchang Yan,Jingyu Sun,Xiaoyan Yi,Tongbo Wei,Junxi Wang,Jinmin Li,Zhongfan Liu,Peng Gao,Zhiqiang Liu

DOI: https://doi.org/10.1002/smll.202270217

IF: 13.3

2022-10-15

Small

Abstract:Semiconductors In article number 2202529, Tongbo Wei, Zhongfan Liu, Peng Gao, Zhiqiang Liu, and co‐workers find that geometry matched WS2 can provide a proper lattice potential field for nitrides epitaxial growth. By using a transferred WS2 buffer layer, a single‐crystalline GaN epilayer can be obtained on an amorphous quartz glass by heterogenous epitaxy.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Yuqing Wang,Ruzhi Wang,Yujie Li,Yuefei Zhang,Mankang Zhu,Biben Wang,Hui Yan

DOI: https://doi.org/10.1039/c2ce26555a

IF: 3.756

2013-01-01

CrystEngComm

Abstract:Gallium nitride nanowires (GaN NWs) were successfully grown on silicon substrates deposited with a thin gold film by plasma-assisted hot filament chemical vapor deposition (CVD), where GaN powder was used as the Ga source and nitrogen and hydrogen gases were used for the reactive gases. The diameters of synthesized GaN NWs are in a range of 40-150 nm and the lengths of some of the NWs are up to over 10 mu m. The GaN NWs crystallize in a wurtzite structure and they are grown in alignment or bending modes depending on the growth conditions. The photoluminescence spectra exhibit five emission bands at about 379, 396, 467, 481 and 491 nm, which are related to the band edge emission, defects and impurities of GaN NWs, respectively. Furthermore, the excellent field emission (FE) properties of GaN NWs were observed, and the FE results reveal that the GaN NWs have a low turn-on field of 1.66 V mu m(-1). It supplies a simple strategy to prepare GaN NW films for optical and electrical applications.
GaN‐on‐Si(100): Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene (adv. Funct. Mater. 42/2019)

Yuxia Feng,Xuelin Yang,Zhihong Zhang,Duan Kang,Jie Zhang,Kaihui Liu,Xinzheng Li,Jianfei Shen,Fang Liu,Tao Wang,Panfeng Ji,Fujun Xu,Ning Tang,Tongjun Yu,Xinqiang Wang,Dapeng Yu,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1002/adfm.201970293

IF: 19

2019-01-01

Advanced Functional Materials

Abstract:In article number 1905056, Xuelin Yang, Kaihui Liu, Bo Shen, and co-workers achieve the epitaxy of single-crystalline gallium nitride (GaN) film on a complementary metal-oxide-semiconductor-compatible Si(100) substrate by applying a one-atom-thick single-crystalline graphene buffer layer. The monolayer graphene provides an in-plane driving force for the uniform alignment of nitrides domains. This apppoach can also enable the growth of wafer-scale hexagonal single-crystalline films on amorphous or flexible substrates.
Single-crystalline GaN Porous Template Prepared by a Simple Top-Down Nitridation Technique

Yuewen Li,Xiangqian Xiu,Zening Xiong,Xuemei Hua,Zili Xie,Tao,Peng Chen,Bin Liu,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1016/j.matlet.2018.12.120

IF: 3

2019-01-01

Materials Letters

Abstract:We have developed a simple top down technique for preparing GaN porous templates with high single-crystallinity by high-temperature nitridation of beta-Ga2O3 films. The GaN template converted from beta-Ga2O3 film contains many voids and exhibits good-crystallinity with (0 0 2) orientation. The results confirm that the GaN porous template is stress-free, and the re-nitridation can effectively improve the crystal quality and luminescence properties of the GaN template. A similar to 100 mu m GaN thick film has been grown on the GaN porous template by halide vapor phase epitaxy, and self-separation of the GaN thick film from the sapphire substrate has been successfully achieved. (C) 2019 Elsevier B.V. All rights reserved.
Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

Xiaochuan Xia,Hongwei Liang,Xinlei Geng,Yuanpeng Chen,Chao Yang,Yang Liu,Rensheng Shen,Mengxiang Xu,Guotong Du

DOI: https://doi.org/10.1007/s10854-016-5835-0

2016-10-08

Abstract:GaN network structure was synthesized on a hexagonal ε-Ga2O3 film by performing thermal nitridation under ammonia atmosphere in III-nitride MOCVD system. High-resolution X-ray diffraction revealed that the GaN had a (0002) preferred orientation, and no other polymorphs of GaN were detected. X-ray photoelectron spectroscopy results confirmed the formation of Ga–N bonds as well as other element status induced from nitridation process. According to field-emission scanning electron microscopy and atomic force microscopy images, the surface of GaN layer shows network morphology, which was caused by etching from hydrogen gas along GaN grain boundary. Our results indicated the potential applications of nitrided GaN/ε-Ga2O3 structure in fabricating novel electronic and optoelectronic devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Jiadong Yu,Lai Wang,Xu Han,Zhibiao Hao,Yi Luo,Changzheng Sun,Yanjun Han,Bing Xiong,Jian Wang,Hongtao Li

DOI: https://doi.org/10.1364/ome.442232

2021-01-01

Optical Materials Express

Abstract:GaN-based films grown on sp3-bonded single-crystalline substrates can maintain the coherent growth character. However, exfoliating III-nitride films from these substrates proves difficult because of the strong sp3-type covalent bonds between the substrates and epilayers. The sp2-bonded two-dimensional (2D) materials exhibit hexagonal in-plane lattice arrangements and weakly bonded layers, so the GaN epilayer grown on 2D materials can be transferred onto foreign substrates with ease. In this paper, graphene is used as the inserted layer (IL) on freestanding GaN substrate and the van der Waals coherent epitaxy of GaN-based single-crystalline films on such graphene/GaN templates is investigated. Density functional theory computations are performed to probe the transmission of crystallographic information of wurtzite GaN through the graphene IL. The appropriate layer numbers of graphene IL and GaN growth temperature are optimized to demonstrate the coherent epitaxy character. Both theoretical and experimental results support that the coherent epitaxy of GaN can only be achieved by using a monolayer graphene IL, and the crystalline quality of optimized GaN film can reach the same level of that grown directly on GaN freestanding substrates.
Structural Properties of Β-Ga2o3 Formed by Dry Thermal Oxidization Process on GaN

Wei,ZhiXin Qin,Sheng Zhao,Fang Liu,ShunFei Fan,JiaXin Zheng,GuoYi Zhang

DOI: https://doi.org/10.1016/j.mssp.2012.04.012

IF: 4.1

2012-01-01

Materials Science in Semiconductor Processing

Abstract:Dry thermal oxidation of GaN thin films grown on Al2O3 (0001) has been performed at different temperatures. The oxidized samples were investigated through X-ray diffraction (XRD) and atomic force microscope (AFM). For samples oxidized at temperatures from 800°C to 950°C, XRD peaks from the (−201), (−402) and (−603) planes of β-Ga2O3 were observed, indicating that a β-Ga2O3 layer was formed on GaN epitaxially. The epitaxial relationships were determined to be β-Ga2O3(−201)||GaN(002) and an in-plane orientation of β-Ga2O3[010]||GaN[110]. When the oxidation temperature is increased further to 1000°C, in addition to the peaks from the (−201), (−402) and (−603) planes, extra peaks corresponding to other planes appeared, indicating that the oxidized layer had deteriorated to polycrystalline Ga2O3.
Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

Qinqin Wei,ChengShan Xue,Zhencui Sun,Wentian Cao,Huizhao Zhuang

2005-01-01

Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

Abstract:Gallium nitride (GaN) films have been successfully fabricated on silicon (111) substrates through ammoniating Ga2O3/Al2O3 films deposited by rf magnetron sputtering. The formed films were characterized by Fourier transform infrared (FTIR) transmission spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscopy (SEM) and photoluminescence spectrum (PL). The results indicate that the films formed are polycrystalline GaN with hexagonal wurtzite structure.
Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Zhaoxia Bi,Rong Zhang,Weiping Li,Xusheng Wang,Shulin Gu,Bo Shen,Yi Shi,Zhiguo Liu,Youdou Zheng

DOI: https://doi.org/10.1360/03yg9006

2003-01-01

Abstract:With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes fromc-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.
The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Lianshan Wang,Xianglin Liu,Yude Zan,Du Wang,Da-Cheng Lu,Zhanguo Wang,Yutian Wang,Lisen Cheng,Ze Zhang

DOI: https://doi.org/10.1016/S0022-0248(98)00514-4

IF: 1.8

1998-01-01

Journal of Crystal Growth

Abstract:Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3μm sample was 54arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4eV at room temperature was observed by photoluminescence spectroscopy.
Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Yuxia Feng,Xuelin Yang,Zhihong Zhang,Duan Kong,Jie Zhang,Kaihui Liu,Xinzheng Li,Jianfei Shen,Fang Liu,Tao Wang,Panfeng Ji,Fujun Xu,Ning Tang,Tongjun Yu,Xinqiong Wang,Dapeng Yu,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1002/adfm.201905056

IF: 19

2019-01-01

Advanced Functional Materials

Abstract:Fabricating single-crystalline gallium nitride (GaN)-based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal-oxide-semiconductor circuits, is a prerequisite for next-generation high-performance electronics and optoelectronics. However, the direct epitaxy of single-crystalline GaN on a Si(100) substrate remains challenging due to the asymmetric surface domains of Si(100), which can lead to polycrystalline GaN with a two-domain structure. Here, by utilizing single-crystalline graphene as a buffer layer, the epitaxy of a single-crystalline GaN film on a Si(100) substrate is demonstrated. The in situ treatment of graphene with NH3 can generate sp(3) C-N bonds, which then triggers the nucleation of nitrides. The one-atom-thick single-crystalline graphene provides an in-plane driving force to align all GaN domains to form a single crystal. The nucleation mechanisms and domain evolutions are further clarified by surface science exploration and first-principle calculations. This work lays the foundation for the integration of GaN-based devices into Si-based integrated circuits and also broadens the choice for the epitaxy of nitrides on unconventional amorphous or flexible substrates.
Subnanometer-thick 2D GaN film with a large bandgap synthesized by plasma enhanced chemical vapor deposition

Gehui Zhang,Luchen Chen,Le Wang,Zhanjie Lu,Haoyu Dong,Zhihai Cheng,Xu Zhang,Xiaohui Xu,Bin Wang,Shanshan Chen

DOI: https://doi.org/10.1039/d1ta10450k

IF: 11.9

2022-01-01

Journal of Materials Chemistry A

Abstract:An improved template method has been developed to synthesize subnanometer-thick 2D GaN films through the balance of nitridation and ion etching during N 2 plasma enhanced CVD.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Hx Zhang,Zz Ye,Bh Zhao

DOI: https://doi.org/10.1016/S0022-0248(99)00518-7

IF: 1.8

2000-01-01

Journal of Crystal Growth

Abstract:In this paper, a single crystalline GaN grown on Si(1 1 1) is reported using a GaN buffer layer by a simple vacuum reactive evaporation method. Scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence measurement (PL), and Hall measurement results indicate that the single crystalline wurtzite GaN was successfully grown on the Si(1 1 1) substrate. The surface of the GaN films is flat and crack-free. A pronounced GaN(0 0 0 2) peak appears in the XRD pattern. The full-width at half-maximum (FWHM) of the double-crystal X-ray rocking curve (DCXRC) for (0 0 0 2) diffraction from the GaN epilayer is 30 arcmin. The PL spectrum shows that the GaN epilayer emits light at the wavelength of 365 nm with an FWHM of 8 nm (74.6 meV). Unintentionally doped films were n-type with a carrier concentration of 1.76 x 10(18)/cm(3) and an electron mobility of 142 cm(3)/V s. The growth technique described was simple but very powerful for growing single crystalline GaN films on Si substrate. (C) 2000 Elsevier Science B.V. All rights reserved.
Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Raghothamachar Balaji,Konkapaka Phanikumar,Wu Huaqiang,Dudley Michael,Spencer Michael

DOI: https://doi.org/10.1557/proc-0892-ff30-07

2005-01-01

Abstract:The sublimation growth technique is highly attractive as a commercially viable GaN substrate technology on account of its simplicity and relatively high growth rates. Sublimation growth of GaN using GaN powder source, however, is hampered by formation of liquid Ga in the source. To overcome this limitation, an oxide transport process using a mixture of gallium oxide (Ga 2 O 3 ) powder and graphite powder as precursors with nitrogen gas as carrier and ammonia as the source of nitrogen has been developed. GaN layers grown by this process were studied by optical microscopy, synchrotron white beam x-ray topography (SWBXT) and high resolution x-ray diffraction (HRXRD) to characterize their structural properties. Studies reveal that the GaN layers grown are single crystal but characterized by dislocation densities and impurities higher than those obtained using GaN powder source. Observed defect distribution is correlated with growth conditions to deduce optimal growth procedure.

Single-crystal GaN Layer Converted from Β-Ga2o3films and Its Application for Free-Standing GaN

Single-crystal GaN layer converted from β-Ga<sub>2</sub>O<sub>3</sub> films and its application for free-standing GaN

Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga2O3

Study on the Nitridation of Β-Ga2o3 Films*

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Continuous Single‐Crystalline GaN Film Grown on WS2‐Glass Wafer (Small 41/2022)

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

GaN‐on‐Si(100): Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene (adv. Funct. Mater. 42/2019)

Single-crystalline GaN Porous Template Prepared by a Simple Top-Down Nitridation Technique

Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Structural Properties of Β-Ga2o3 Formed by Dry Thermal Oxidization Process on GaN

Formation of GaN film by ammoniating Ga2O3/Al2O3 deposited on Si(lll) substrate

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Subnanometer-thick 2D GaN film with a large bandgap synthesized by plasma enhanced chemical vapor deposition

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source