Abstract:A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is fabricated with a 180 nm CMOS Image Sensor (CIS) process to study the particle detection performance of enlarged pixels. In this work, the radiation-induced effects on the charge collection of the sensor under the fluence of 1 $\times$ 10^13 1 MeV neq/cm^2 are studied by the measurements with the radioactive source of Fe-55 and the Technology Computer Aided Design (TCAD) simulations, since the radiation hardness of 6.8 $\times$ 10^12 1 MeV neq/cm^2 per year for Non-Ionizing Energy Loss (NIEL) effects is required. In measurements, the sensor gain has been calibrated using the k-$\alpha$ peak of Fe-55 before and after irradiation. The pixel-wise equivalent noise charge (ENC), charge collection efficiency (CCE) and signal-to-noise ratio (SNR) were evaluated. The radiation-induced effects on cluster properties are studied through a self-developed reconstruction algorithm. In TCAD simulations, charge collections in 5 $\times$ 5 pixel matrixes for two typical impinging cases of incident particles were simulated with and without irradiation. Both measurements and simulations indicate that enlarged pixels with area of 21 $\mu$m $\times$ 84 $\mu$m, though suffering greater loss on sensor performance than small pixels do, still have satisfactory noise and charge collection performance after irradiation for particle tracking in the upcoming collider detectors.

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Casca: A Readout Asic For A Tpc Based X-Ray Polarimeter

Development of a Low Power and High Integration Readout ASIC for Time Projection Chambers in 65 Nm CMOS

Experimental Characterization of an X-ray Photon Counting Detector

Radiation study of the LHCb UT front-end readout ASIC

Beam Test of a Monolithic Active Pixel Sensor for the CEPC Vertex Detector

The Development of a Readout ASIC for TPC Based X-ray Polarimeter

Development Of A Multi-Energy Photon-Counting Readout Asic For Czt Detectors

WASA: a low power front-end ASIC for time projection chambers in 65 nm CMOS

WASA: a low power and high integration readout ASIC for TPCs in 65 nm CMOS

Test measurements of an ASIC for X-ray material discrimination by using on-chip time domain integration and a CdTe sensor

Experimental characterization of asimultaneous photoncounting and energy integrating detector for X-ray imaging applications

Design and Test Results of a Front-End ASIC for Radiation Detectors

Radiation hardness study on a CMOS pixel sensor for charged particle tracking

A Front-End ASIC for Semiconductor Radiation Detectors with Pile-up Rejection Capability

A New Kind of Switched Capacitor Array

Testing of a new type SEU-tolerant SRAM

Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

Development of a Pixel Readout ASIC for CZT Detectors for Spectral X-ray Photon-Counting Imaging Applications

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Study of p-type silicon MOS capacitors at HL-LHC radiation levels through cobalt-60 gamma source and TCAD simulation