Abstract:Transition metal dichalcogenides (TMDCs) exhibit favorable properties for optical communication in the GHz regime, such as large mobilities, high extinction coefficients and silicon compatibility. While impressive improvements of their sensitivity have been realized, the bandwidths of these devices have been mostly limited to few MHz. We argue that this shortcoming originates in the relatively large RC constants of TMDC-based photodetectors, which suffer from high surface defect densities, inefficient charge carrier injection at the electrode/TMDC interface and long charging times. However, we show in a series of papers that rather simple adjustments in the device architecture afford TMDC-based photodetectors with bandwidths of several 100s MHz. We rationalize the success of these adjustments in terms of the specific physical-chemical properties of TMDCs, namely their anisotropic in-plane/out-of-plane carrier behavior, large optical absorption, and chalcogenide-dependent surface chemistry. Just one surprisingly simple yet effective pathway to fast TMDC photodetection is the reduction of the photoresistance by using light-focusing optics, which enables bandwidths of 0.23 GHz with an energy consumption of only 27 fJ/bit. By reflecting on the ultrafast intrinsic photoresponse times of few picoseconds in TMDC heterostructures, we motivate the application of more demanding chemical strategies to exploit such ultrafast intrinsic properties for true GHz-operation in real devices. A key aspect in this regard is the management of surface defects, which we discuss in terms of its dependence on the layer thickness, its tunability by molecular adlayers and the prospects of replacing thermally evaporated metal contacts by laser-printed electrodes fabricated with inks of metalloid clusters. We highlight the benefits of combining TMDCs with graphene to heterostructures that exhibit the ultrafast photoresponse and large spectral range of Dirac materials with the low dark current and high responsivities of semiconductors. We introduce the bulk photovoltaic effect in TMDC-based materials with broken inversion symmetry as well as a combination of TMDCs with plasmonic nanostructures as means for increasing the bandwidth and responsivity simultaneously. Finally, we describe the prospects of embedding TMDC photodetectors into optical cavities with the objective of tuning the lifetime of the photoexcited state and increasing the carrier mobility in the photoactive layer. The findings and concepts detailed in this account demonstrate that GHz photodetection with TMDCs is feasible, and we hope that these bright prospects for their application as next-generation optoelectronic material motivates more chemists and material scientists to actively pursue the development of the more complicated material combinations outlined here.

Multi-Photon Absorption in Monolayer Transition-Metal Di-Chalcogenides and Its Applications for Sub-band Multi-Photon Detection

Giant Three-Photon Absorption in Monolayer MoS2 and Its Application in Near-Infrared Photodetection

Two-photon Absorption Arises from Two-Dimensional Excitons.

Monolayer Excitonic Emission for Imaging Spatial Dispersion of Photonic Crystals

Two-Photon Absorption and Subband Photodetection in Monolayer Mos2

Two-dimensional Transition Metal Dichalcogenides Mediated Long Range Surface Plasmon Resonance Biosensors

Dynamic Photochemical and Optoelectronic Control of Photonic Fano Resonances via Monolayer MoS2 Trions.

Emergence of new optical resonances in single-layer transition metal dichalcogenides with atomic-size phase patterns

Multi-photon absorption properties of semiconducting nanomaterials

Visualization of Band Shifting and Interlayer Coupling in WxMo1-xS2 Alloys using Near-Field Broadband Absorption Microscopy

Exciton Radiative Recombination Dynamics and Nonradiative Energy Transfer in Two-Dimensional Transition-Metal Dichalcogenides

Enhanced Terahertz Spectroscopy of a Monolayer Transition Metal Dichalcogenide

Room Temperature Terahertz Electroabsorption Modulation by Excitons in Monolayer Transition Metal Dichalcogenides

Toward GHz-Photodetection with Transition Metal Dichalcogenides

Ultrafast Multi-Shot Ablation and Defect Generation in Monolayer Transition Metal Dichalcogenides

Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics

Multi‐Controllability of Ambipolar Photoconductivity in Transition Metal Dichalcogenides Van der Waals Heterostructures

Broadband Excitonic Near-Infrared Photoresponse at the Van Der Waals Heterostructure/Metal Interface

Preparation, Properties and Optoelectronic Applications of Transition Metal Dichalcogenides

Hyperspectral absorption of semiconductor monolayer crystals

High-Efficiency Infrared Sensing with Optically Excited Graphene-Transition Metal Dichalcogenide Heterostructures.