Abstract:MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex photoresponse characteristics. We study the electrical response to scanning photo-excitation on MoS2 monolayer (1L) and bilayer (2L) devices, and also on monolayer/bilayer (1L/2L) planar heterojunction and monolayer/few-layer/multi-layer (1L/FL/ML) planar double heterojunction devices to unveil the intrinsic mechanisms responsible for photocurrent generation in these materials and junctions. Strong photoresponse modulation is obtained by scanning the position of the laser spot, as a consequence of controlling the relative dominance of a number of layer dependent properties, including (i) photoelectric effect (PE), (ii) photothermoelectric effect (PTE), (iii) excitonic effect, (iv) hot photo-electron injection from metal, and (v) carrier recombination. The monolayer and bilayer devices show peak photoresponse when the laser is focused at the source junction, while the peak position shifts to the monolayer/multi-layer junction in the heterostructure devices. The photoresponse is found to be dependent on the incoming light polarization when the source junction is illuminated, although the polarization sensitivity drastically reduces at the monolayer/multi-layer heterojunction. Finally, we investigate laser position dependent transient response of photocurrent to reveal trapping of carriers in SiO2 at the source junction is the critical factor to determine the transient response in 2D photodetectors, and also show that, by systematic device design, such trapping can be avoided in the heterojunction devices, resulting in fast transient response. The insights obtained will play an important role in designing fast 2D TMDs based photodetector and related optoelectronic and thermoelectric devices.

Two-Photon Absorption and Subband Photodetection in Monolayer Mos2

Modeling and simulation of high gain monolayer MoS<inf>2</inf> photodetector

Giant Three-Photon Absorption in Monolayer MoS2 and Its Application in Near-Infrared Photodetection

Giant Two-Photon Absorption in Monolayer MoS2

Two-photon Absorption Arises from Two-Dimensional Excitons.

Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2

Excitonic effect on two-photon absorption of two-dimensional semiconductors: Theory and applications to MoS2 and WS2 monolayers

Photothermoelectric and Photovoltaic Effects Both Present in Mos2

Direct Observationof DegenerateTwo-Photon Absorption and Its Saturation in WS2 and MoS2 Monolayer and Few-Layer Films

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Multilayer MoS2 Photodetector with Broad Spectral Range and Multiband Response

Visible To Near-Infrared Photodetectors Based On Mos2 Vertical Schottky Junctions

Electronic and optical properties of single-layer MoS 2

Optical Absorption Enhancement in Monolayer MoS2 Using Multi-Order Magnetic Polaritons

High Performance MoS2 Phototransistors Photogated by PN Junction

Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2

Exciton band structure of molybdenum disulfide: from monolayer to bulk

Analytical photoresponses of Schottky contact MoS2 phototransistors

Optical Spectrum of N-Type and P-Type Monolayer MoS_2 in the Presence of Proximity-Induced Interactions

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

Photoresponse of atomically thin MoS2 layers and their planar heterojunctions