Abstract:Beyond-diffraction-limit optical absorption spectroscopy provides profound information on the graded band structures of composition-spread and stacked two-dimensional materials, in which direct/indirect bandgap, interlayer coupling, sliding, and possible defects significantly modify their optoelectronic functionalities such as photoluminescence efficiency. We here visualize the spatially-varying band structure of monolayer and bilayer transition metal dichalcogenide alloys for the first time by using near-field broadband absorption microscopy. The near-field-spectral and -spatial diagrams manifest the excitonic band shift that results from the interplay of composition spreading and interlayer coupling. These results enable us to identify the top layer of the bilayer alloy as pure WS2. We also use the aberration-free near-field transmittance images to demarcate the exact boundaries of alloyed and pure transition metal dichalcogenides. This technology can offer new insights on various layered structures in the era of stacking science in quest of novel quantum optoelectronic devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to overcome the chromatic aberration and diffraction - limit problems encountered by traditional far - field microscopes in characterizing band - gap variation and inter - layer coupling in two - dimensional transition metal dichalcogenide (TMDs) alloys through near - field broadband absorption microscopy technology. Specifically, the research aims to achieve high - resolution imaging and analysis of spatially varying band structures, inter - layer coupling, and composition distribution in monolayer and bilayer WxMo1 - xS2 alloys. ### Problem Analysis 1. **Characterization of Band - Gap Variation and Inter - Layer Coupling**: - Traditional photoluminescence (PL) spectroscopy can only detect the lowest exciton states, while absorption spectroscopy can provide information on higher exciton excitation. - In multilayer structures, vertical heterostructures, alloys, and highly defective samples, the PL detection efficiency is low because non - radiative processes dominate exciton recombination. - Far - field microscopes are difficult to achieve high - resolution absorption imaging due to chromatic aberration and diffraction limits. 2. **Requirement for High - Resolution Imaging**: - The research requires a technique that can provide chromatic - aberration - free, high - spatial - resolution spectral information below the diffraction limit to accurately characterize band - gap variation and inter - layer coupling. - By performing near - field broadband absorption microscopy imaging on WxMo1 - xS2 alloys, the band - structure changes in different composition regions can be revealed, and the specific composition of each layer can be determined. ### Solutions - **Near - Field Broadband Absorption Microscope (NF - tr)**: - Use a near - field scanning optical microscope (a - SNOM) to limit the spot size through a sub - wavelength aperture to achieve chromatic - aberration - free, high - resolution imaging below the diffraction limit. - NF - tr can provide complete band - energy information from A, B to C excitons, which is suitable for characterizing complex spatially varying band structures. - **Experimental Verification**: - Perform NF - tr imaging on monolayer WxMo1 - xS2 alloys to reveal the spatial distribution of band - gap variation with composition. - Perform NF - tr and near - field photoluminescence (NF - PL) imaging on bilayer WxMo1 - xS2 alloys to confirm that the top layer is pure WS2, and the inter - layer coupling causes a red - shift in the exciton band - gap. Through these methods, the research not only overcomes the limitations of traditional techniques in characterizing complex TMD alloys but also provides new tools and insights for exploring new - type quantum optoelectronic devices.

Visualization of Band Shifting and Interlayer Coupling in WxMo1-xS2 Alloys using Near-Field Broadband Absorption Microscopy

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