Abstract:Using an alkali metal halide‐assisted chemical vapor deposition approach, triangular TMDC alloy (MoxW1‐xS2) monolayers are synthesized with continuously varied W/Mo concentrations from the center to the edges. The combined experimental photoluminescence characterization with theoretical DFT calculations including spin‐orbit interactions presents a thorough investigation of the nature of myriad optical transition excitons in the alloyed monolayers. Engineering electronic bandgaps is crucial for applications in information technology, sensing, and renewable energy. Transition metal dichalcogenides (TMDCs) offer a versatile platform for bandgap modulation through alloying, doping, and heterostructure formation. Here, the synthesis of a 2D MoxW1‐xS2 graded alloy is reported, featuring a Mo‐rich center that transitions to W‐rich edges, achieving a tunable bandgap of 1.85 to 1.95 eV when moving from the center to the edge of the flake. Aberration‐corrected high‐angle annular dark‐field scanning transmission electron microscopy showed the presence of sulfur monovacancy, VS, whose concentration varied across the graded MoxW1‐xS2 layer as a function of Mo content with the highest value in the Mo‐rich center region. Optical spectroscopy measurements supported by ab initio calculations reveal a doublet electronic state of VS, which is split due to the spin‐orbit interaction, with energy levels close to the conduction band or deep in the bandgap depending on whether the vacancy is surrounded by W atoms or Mo atoms. This unique electronic configuration of VS in the alloy gave rise to four spin‐allowed optical transitions between the VS levels and the valence bands. The study demonstrates the potential of defect and optical engineering in 2D monolayers for advanced device applications.

Observation of band gap bowing effect vanishing in graded-composition monolayer Mo1−xWxS2 alloy

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Two-Dimensional MoxW1-xS2 Graded Alloys: Growth and Optical Properties

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Chemical Vapor Deposition of Monolayer Mo 1−x W x S 2 Crystals with Tunable Band Gaps

CVD synthesis of Mo(1−x)WxS2 and MoS2(1−x)Se2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide

Temperature-dependent photoluminescence emission and Raman scattering from Mo1-x W x S2 monolayers.

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1-xS2 Monolayers

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1‐xS2 Monolayers

Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys.

Broad Band Modulation of Two-Dimensional Mo1-xWxS2 by Variational Compositions

Broad band Modulation of two-dimensional Mo 1-x W x S 2 by variational compositions

Visualization of Band Shifting and Interlayer Coupling in WxMo1-xS2 Alloys using Near-Field Broadband Absorption Microscopy

Synthesis of component-controllable monolayer MoxW(1- x)S2 ySe2(1- y) alloys with continuously tunable band gap and carrier type

Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys

Band engineering in epitaxial monolayer transition metal dichalcogenides alloy Mo<i><sub>x</sub></i>W<sub>1-<i>x</i></sub>Se<sub>2</sub> thin films

Electronic structure and dynamic properties of two-dimensional W Mo1−S2 ternary alloys from first-principles calculations