Abstract:Transition metal dichalcogenides (TMDCs) exhibit favorable properties for optical communication in the GHz regime, such as large mobilities, high extinction coefficients and silicon compatibility. While impressive improvements of their sensitivity have been realized, the bandwidths of these devices have been mostly limited to few MHz. We argue that this shortcoming originates in the relatively large RC constants of TMDC-based photodetectors, which suffer from high surface defect densities, inefficient charge carrier injection at the electrode/TMDC interface and long charging times. However, we show in a series of papers that rather simple adjustments in the device architecture afford TMDC-based photodetectors with bandwidths of several 100s MHz. We rationalize the success of these adjustments in terms of the specific physical-chemical properties of TMDCs, namely their anisotropic in-plane/out-of-plane carrier behavior, large optical absorption, and chalcogenide-dependent surface chemistry. Just one surprisingly simple yet effective pathway to fast TMDC photodetection is the reduction of the photoresistance by using light-focusing optics, which enables bandwidths of 0.23 GHz with an energy consumption of only 27 fJ/bit. By reflecting on the ultrafast intrinsic photoresponse times of few picoseconds in TMDC heterostructures, we motivate the application of more demanding chemical strategies to exploit such ultrafast intrinsic properties for true GHz-operation in real devices. A key aspect in this regard is the management of surface defects, which we discuss in terms of its dependence on the layer thickness, its tunability by molecular adlayers and the prospects of replacing thermally evaporated metal contacts by laser-printed electrodes fabricated with inks of metalloid clusters. We highlight the benefits of combining TMDCs with graphene to heterostructures that exhibit the ultrafast photoresponse and large spectral range of Dirac materials with the low dark current and high responsivities of semiconductors. We introduce the bulk photovoltaic effect in TMDC-based materials with broken inversion symmetry as well as a combination of TMDCs with plasmonic nanostructures as means for increasing the bandwidth and responsivity simultaneously. Finally, we describe the prospects of embedding TMDC photodetectors into optical cavities with the objective of tuning the lifetime of the photoexcited state and increasing the carrier mobility in the photoactive layer. The findings and concepts detailed in this account demonstrate that GHz photodetection with TMDCs is feasible, and we hope that these bright prospects for their application as next-generation optoelectronic material motivates more chemists and material scientists to actively pursue the development of the more complicated material combinations outlined here.

Broadband Excitonic Near-Infrared Photoresponse at the Van Der Waals Heterostructure/Metal Interface

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Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga2O3 Hybrid-Dimensional Heterostructures.

Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure

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Enhanced Photobolometric Effect in an All-Semimetal Van Der Waals Heterostructure

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Broadband light absorption and photoresponse enhancement in monolayer WSe2 crystal coupled to Sb2O3 microresonators

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Mid-IR Photodetection by Interlayer Exciton in 2D Heterostructure

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Excitonic Effect Drives Ultrafast Transition in Two-Dimensional Transition Metal Dichalcogenides.

Controlled Growth of Vertically Stacked in 2 Se 3 /wse 2 Heterostructures for Ultrahigh Responsivity Photodetector

Controlled growth of vertically stacked In2Se3/WSe2 heterostructures for ultrahigh responsivity photodetector

Exciton Dynamics and Photoresponse of a CVD-grown WS2/thermally Evaporated CsSnBr3 Heterostructure