White-light-modulated Resistive Switching Behavior in ZnO/BiFeO3 Structure

Liangchen Wu,Xiaoping Li,Dandan Liang,Junshuai Wang,Peng Chen

DOI: https://doi.org/10.1016/j.ssc.2018.11.002

IF: 1.934

2019-01-01

Solid State Communications

Abstract:Bipolar resistive switching behavior in ZnO/BiFeO3 device is demonstrated, which can be modulated by white light at room temperature. The light-control resistive switching effect in ZnO/BiFeO3 device shows excellent stability in the light conditions when operating external sweep voltages. The ZnO/BiFeO3 device device can maintain superior stability over 439 cycles under the irradiation with power density of 2 mW/cm(2). Based on the double-logarithm current-voltage(I-V) fitting curves, the electrons trapping and de-trapping in the Schottky-Like depletion layer in the interface of our memory cells should dominate the resistive switching behavior. This work can provide a possible mechanism for the light-control resistive switching system.