Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Room‐Temperature Ferroelectricity in Hexagonally Layered Α‐in2se3 Nanoflakes Down to the Monolayer Limit

Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Layer-dependent Ferroelectricity in 2H-Stacked Few-Layer Α-In2se3

Atomically Thin Α-In2se3: an Emergent Two-Dimensional Room Temperature Ferroelectric Semiconductor

Room-temperature Out-of-plane and In-Plane Ferroelectricity of Two-Dimensional Β-Inse Nanoflakes

Out-of-plane Piezoelectricity and Ferroelectricity in Layered $α$-In2Se3 Nano-flakes

Emergence of ferroelectricity in a nonferroelectric monolayer

Non-volatile Ferroelectric Memory Effect in Ultrathin Α-In2se3

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

Periodic Ferroelectric Stripe Domains in α-In 2 Se 3 Nanoflakes Grown via Reverse-Flow Chemical Vapor Deposition

Intrinsic ferroelectric switching in two-dimension $α$-In$_2$Se$_3$

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Funct. Mater. 20/2019)

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions