Effects of La doping induced carrier concentration regulation and band structure modification on thermoelectric properties of PbSe
Fang Xu,Dan Zhang,Shikang Gao,Lei Yang,Xingyuan San,Zhiliang Li,Xin Qian,Junyou Yang,Shufang Wang,Fang Xu,Dan Zhang,Shikang Gao,Lei Yang,Xingyuan San,Zhiliang Li,Xin Qian,Junyou Yang,Shufang Wang
DOI: https://doi.org/10.1016/j.scriptamat.2021.114360
IF: 6.302
2022-02-01
Scripta Materialia
Abstract:Here, we have systematically explored the effects of rare-earth metal La doping on the thermoelectric properties of PbSe. The results show that i) La is an effective n-type dopant to regulate the carrier concentration, ii) La-doping can flatten the conduct band of PbSe to increase the effective mass and thus the improved Seebeck coefficient. Under the combined regulation of carrier concentration and band structure, a high average power factor of 1650 µW.m−1K−2 among 300-873 K is obtained. Meanwhile, the lattice thermal conductivity will be reduced due to the extra point defect scattering and the depressed bipolar conduct by La doping. Finally, a peak ZT of 0.96 and a high average ZT of 0.71 among 300-873 K are achieved in the 0.125% La doped sample. The multiple beneficial effects stemming from rare-earth metal La doping is an important finding that will stimulate new exploration toward high-performance n-type PbSe-based thermoelectric materials.
materials science, multidisciplinary,nanoscience & nanotechnology,metallurgy & metallurgical engineering