Synergetic Optimization of Electronic and Thermal Transport for High-Performance Thermoelectric GeSe–AgSbTe2 Alloy

Mingtao Yan,Xiaojian Tan,Zhiwei Huang,Guoqiang Liu,Peng Jiang,Xinhe Bao

DOI: https://doi.org/10.1039/c8ta01393d

IF: 11.9

2018-01-01

Journal of Materials Chemistry A

Abstract:Via alloying with AgSbTe2, the thermoelectric performance of GeSe is dramatically improved by carrier concentration optimization and thermal conductivity suppression.

What problem does this paper attempt to address?

Enhancing the Thermoelectric Performance of GeSb4Te7 Compounds via Alloying Se

Siyu Wang,Tong Xing,Tian-Ran Wei,Jiawei Zhang,Pengfei Qiu,Jie Xiao,Dudi Ren,Xun Shi,Lidong Chen

DOI: https://doi.org/10.3390/ma16093368

IF: 3.4

2023-04-26

Materials

Abstract:Ge-Sb-Te compounds (GST), the well-known phase-change materials, are considered to be promising thermoelectric (TE) materials due to their decent thermoelectric performance. While Ge2Sb2Te5 and GeSb2Te4 have been extensively studied, the TE performance of GeSb4Te7 has not been well explored. Reducing the excessive carrier concentration is crucial to improving TE performance for GeSb4Te7. In this work, we synthesize a series of Se-alloyed GeSb4Te7 compounds and systematically investigate their structures and transport properties. Raman analysis reveals that Se alloying introduces a new vibrational mode of GeSe2, enhancing the interatomic interaction forces within the layers and leading to the reduction of carrier concentration. Additionally, Se alloying also increases the effective mass and thus improves the Seebeck coefficient of GeSb4Te7. The decrease in carrier concentration reduces the carrier thermal conductivity, depressing the total thermal conductivity. Finally, a maximum zT value of 0.77 and an average zT value of 0.48 (300–750 K) have been obtained in GeSb4Te5.5Se1.5. This work investigates the Raman vibration modes and the TE performance in Se-alloyed GeSb4Te7 sheddinglight on the performance optimization of other GST materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Yang Jin,Yuting Qiu,Shulin Bai,Hongyao Xie,Shibo Liu,Tao Hong,Xiang Gao,Yi Wen,Li-Dong Zhao

DOI: https://doi.org/10.1002/aenm.202400623

IF: 27.8

2024-01-01

Advanced Energy Materials

Abstract:Thermoelectric materials are widely researched for their energy conversion capabilities in the fields of power generation and refrigeration. And a superior thermoelectric conversion efficiency requires an excellent power factor and low thermal conductivity. Herein, a remarkable thermoelectric figure of merit(ZT) similar to 2.6 at 673 K is realized in GeTe with 20% addition of CuSbSe2. Multiple synergistic effects of CuSbSe2 alloying collectively contribute to the excellent thermoelectric performance in GeTe. CuSbSe2 alloying effectively tunes ultrahigh carrier density of GeTe to the optimum. The introduction of Cu, Sb, and Se atoms create numerous point defects that scatter high-frequency phonons. Additionally, surplus CuSbSe2 facilitates the formation of copper-selenium phases, which embed at grain boundaries and generate interfaces after sintering. Combining the planar defects evolved from Ge vacancies, multi-dimension defects effectively scatter multiple frequency phonons. An extraordinarily low lattice thermal conductivity of 0.3 Wm(-1) K-1 at 673 K is obtained, approaching the theoretical estimation predicted by Cahill model. Eventually, the peak conversion efficiency of 7.4% is obtained in segmented device with Delta T of 419 K. The commingled effects of CuSbSe2 in GeTe further open up an elitist route to designing high-performance materials.
Dual Alloying Enables High Thermoelectric Performance in AgSbTe2 by Manipulating Carrier Transport Behavior

Kaiqi Zhang,Shuang Liu,Xincan Wang,Shuai Wu,Qihong Xiong,Xue Wang,Junqi Chen,Guiwen Wang,Bin Zhang,Huixia Fu,Guang Han,Guoyu Wang,Xu Lu,Yun Zhou,Xiaoyuan Zhou

DOI: https://doi.org/10.1002/adfm.202400679

IF: 19

2024-03-21

Advanced Functional Materials

Abstract:The carrier transport behavior of AgSbTe2 is tuned from two‐type carrier to one‐type carrier by adjusting the ratio of hole and electron conductivity through dual alloying to minimize the influence from minority carrier. A double‐leg thermoelectric device is fabricated guided by finite element simulation for geometry optimization, which shows a considerably high output power and high reliability. AgSbTe2 exhibits superior thermoelectric performance in the mid‐temperature region, but its electrical properties are strongly affected by intrinsic defects and secondary phases. Distinctively, the high mobility electrons still play an important role as minority carriers in p‐type AgSbTe2 even below the bipolarization temperature and decrease the Seebeck coefficient. Here, the Al and Se dual alloying can effectively increase the hole concentration by reducing the cation vacancy formation energy and simultaneously reduce the electron concentration by suppressing the n‐type Ag2Te secondary phase are demonstrated, which results in the shift of carrier transport from two‐type to one‐type as confirmed by Hall measurement. Consequently, through adjusting the ratio of hole and electron conductivity, the average power factor of alloyed sample is enhanced by 70%. Combined with further reduced lattice thermal conductivity resulting from high‐density stacking faults and superstructures, a maximum zT of 1.90 and an average zT of 1.42 are obtained in the temperature range of 323 to 623 K in the (AgSbTe2)0.98(AgAlSe2)0.02 sample. Finally, based on the finite element analysis modeling results, both single‐leg and double‐leg thermoelectric devices are fabricated, which show high conversion efficiency of 11.2% and 5.2%, respectively.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Anionic regulation and valence band convergence boosting the thermoelectric performance of Se-alloyed GeSb 2 Te 4 single crystal

Peng Chen,Bin Zhang,Zizhen Zhou,Sikang Zheng,De Zhang,Yanci Yan,Guang Han,Xu Lu,Hong Wu,Xiaoyuan Zhou,Guoyu Wang

DOI: https://doi.org/10.1016/j.actamat.2023.118999

IF: 9.4

2023-05-13

Acta Materialia

Abstract:GeSb 2 Te 4 , a layer-structured pseudo-binary chalcogenide, is a promising thermoelectric material with low lattice thermal conductivity ensured by the van de Waals gap. However, its excessive hole concentration leads to low Seebeck coefficient and limited thermoelectric performance. Herein, GeSb 2 (Te 1- x Se x ) 4 ( x = 0, 0.05, 0.07, 0.1, and 0.15) single crystals were grown via Bridgman method for thermoelectric performance investigation, with single crystals to utilize the anisotropic low lattice thermal conductivity, and Se-alloying as the strategy to optimize the thermoelectric performance. It was found that Se alloying increases the Seebeck coefficients, deriving from the reduced carrier concentrations due to the enlarged formation energy of intrinsic Ge Sb(A1) , Ge Sb(A2) , and V Ge(A2) defects, as well as the simultaneous enhancement of density-of-states effective mass from a facilitated valence band convergence. Besides, Se-alloying also contributes to the reduction of the lattice thermal conductivity. With the forementioned benefits, a high figure of merit of 1.02 is obtained at 723 K in the out-of-plane direction of the crystal sample GeSb 2 (Te 0.9 Se 0.1 ) 4 , and a 74% improvement on average zT is gained. The study of anionic regulation and valence band convergence in GeSb 2 Te 4 -based single crystal provides an effective pathway for performance optimization in related layer-structured thermoelectric materials.

materials science, multidisciplinary,metallurgy & metallurgical engineering
High Thermoelectric Performance of New Rhombohedral Phase of GeSe Stabilized Through Alloying with AgSbSe2

Zhiwei Huang,Samuel A. Miller,Binghui Ge,Mingtao Yan,Shashwat Anand,Tianmin Wu,Pengfei Nan,Yuanhu Zhu,Wei Zhuang,G. Jeffrey Snyder,Peng Jiang,Xinhe Bao

DOI: https://doi.org/10.1002/anie.201708134

2017-01-01

Angewandte Chemie

Abstract:AbstractGeSe is a IV–VI semiconductor, like the excellent thermoelectric materials PbTe and SnSe. Orthorhombic GeSe has been predicted theoretically to have good thermoelectric performance but is difficult to dope experimentally. Like PbTe, rhombohedral GeTe has a multivalley band structure, which is ideal for thermoelectrics and also promotes the formation of Ge vacancies to provide enough carriers for electrical transport. Herein, we investigate the thermoelectric properties of GeSe alloyed with AgSbSe2, which stabilizes a new rhombohedral structure with higher symmetry that leads to a multivalley Fermi surface and a dramatic increase in carrier concentration. The zT of GeAg0.2Sb0.2Se1.4 reaches 0.86 at 710 K, which is 18 times higher than that of pristine GeSe and over four times higher than doped orthorhombic GeSe. Our results open a new avenue towards developing novel thermoelectric materials through crystal phase engineering using a strategy of entropy stabilization of high‐symmetry alloys.
Thermoelectric Performance Optimization and Phase Transition of GeTe by Alloying with Orthorhombic CuSbSe 2

Na Man,Jianfeng Cai,Zhe Guo,Guoqiang Liu,Peng Sun,Hongxiang Wang,Qiang Zhang,Xiaojian Tan,Yinong Yin,Jun Jiang

DOI: https://doi.org/10.1021/acsaem.1c00632

IF: 6.4

2021-03-25

ACS Applied Energy Materials

Abstract:GeTe-based compounds are promising thermoelectric materials at medium temperature, while the performance of the GeTe matrix is at the mercy of its high hole concentration and high thermal conductivity. This work reports the thermoelectric performance optimization of GeTe by alloying with CuSbSe2. With only 5% CuSbSe2 being introduced, the p-type hole concentration is greatly decreased from ∼1021 to ∼1020 cm–3, and the thermal conductivity at room temperature is reduced by more than 70%. Interestingly, the alloying of CuSbSe2 also induces a crystal structure transition of GeTe which results in the cubic structure of GeTe at room temperature, in spite of the noncubic structure of orthorhombic CuSbSe2. Owing to the phase transition and carrier concentration optimization, the thermoelectric performance is largely improved relative to the pristine compound. Eventually, a ZTmax ∼ 1.65 is achieved at 630 K. It is also indicated that the performance of GeTe–CuSbSe2 could be further improved by the careful tuning of carrier concentration.This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Outstanding CdSe with Multiple Functions Leads to High Performance of GeTe Thermoelectrics

Yang Jin,Dongyang Wang,Tao Hong,Lizhong Su,Haonan Shi,Shaoping Zhan,Yuping Wang,Sining Wang,Xiang Gao,Yuting Qiu,Li‐Dong Zhao

DOI: https://doi.org/10.1002/aenm.202103779

IF: 27.8

2022-01-22

Advanced Energy Materials

Abstract:Thermoelectric materials can achieve the direct conversion between electricity and heat, which has drawn extensive attention in recent decades. Understanding the chemical nature of band structure and microstructure is essential to boost the thermoelectric performance of given materials. Herein, CdSe alloying promotes the evolution of multiple valence bands in GeTe, resulting in the contemporaneous appearance of band convergence and density of state distortion, which benefits the sharply enhanced effective mass from 2.3 m0 to 5.0 m0. The carrier mobility and effective mass are well optimized via CdSe alloying, contributing to the ultrahigh weighted mobility of ≈199 cm2 V−1 s−1 at 300 K in CdSe‐alloyed GeTe. Accordingly, a superior power factor of ≈41 µW cm−1 K−2 is attained at 673 K. Meanwhile, the nanoprecipitates, strain, and mass field fluctuations introduced by CdSe alloying result in a significantly decreased lattice thermal conductivity. A highest figure of merit (ZT) of ≈2.3 at 673 K and the ultrahigh ZTave of ≈1.46 at 303–773 K are achieved in CdSe‐alloyed GeTe. This work illustrates that the charge and phonon transport properties of GeTe can be simultaneously optimized through integrating band engineering and all‐scale defects incorporation via CdSe alloying. The evolution of multiple valence bands, band convergence and density‐of‐states distortion, strongly enhances the effective mass of thermoelectrics, leading to an ultrahigh weighted mobility. The lattice thermal conductivity is significantly reduced through introducing all‐scale defects via alloying CdSe. Consequently, an ultrahigh ZT of 2.3 at 673 K and a ZTave of 1.46 at 303–773 K are obtained in CdSe‐alloyed GeTe.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Simultaneous Optimization of Carrier Concentration and Alloy Scattering for Ultrahigh Performance GeTe Thermoelectrics

Juan Li,Zhiwei Chen,Xinyue Zhang,Hulei Yu,Zihua Wu,Huaqing Xie,Yue Chen,Yanzhong Pei

DOI: https://doi.org/10.1002/advs.201700341

IF: 15.1

2017-09-30

Advanced Science

Abstract:In order to locate the optimal carrier concentrations for peaking the thermoelectric performance in p-type group IV monotellurides, existing efforts focus on aliovalent doping, either to increase (in PbTe) or to decrease (in SnTe and GeTe) the hole concentration. The limited solubility of aliovalent dopants usually introduces insufficient phonon scattering for thermoelectric performance maximization. With a decrease in the size of cation, the concentration of holes, induced by cation vacancies in intrinsic compounds, increases rapidly from ≈1018 cm-3 in PbTe to ≈1020 cm-3 in SnTe and then to ≈1021 cm-3 in GeTe. This motivates a strategy here for reducing the carrier concentration in GeTe, by increasing the mean size of cations and vice-versa decreasing the average size of anions through isovalent substitutions for increased formation energy of cation vacancy. A combination of the simultaneously resulting strong phonon scattering due to the high solubility of isovalent impurities, an ultrahigh thermoelectric figure of merit, zT of 2.2 is achieved in GeTe-PbSe alloys. This corresponds to a 300% enhancement in average zT as compared to pristine GeTe. This work not only demonstrates GeTe as a promising thermoelectric material but also paves the way for enhancing the thermoelectric performance in similar materials.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Achieving Superior Thermoelectric Performance in Ge4Se3Te Via Symmetry Manipulation with I–V–VI2 Alloying

Mingjie Guo,Hong-Hua Cui,Weiping Guo,Zixuan Chen,Hongwei Ming,Zhong-Zhen Luo,Zhigang Zou

DOI: https://doi.org/10.1002/adfm.202313720

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:Although orthorhombic GeSe is predicted to have an ultrahigh figure of merit, ZT approximate to 2.5, up to now, the highest experimental value is approximate to 0.2 due to the low carrier concentration (n(H) approximate to 10(18) cm(-3)). Improving symmetry is an effective approach for enhancing the ZT of GeSe-based materials. With Te-alloying, Ge4Se3Te displays the two-dimensional hexagonal structure and high n(H) approximate to 1.23 x 10(21) cm(-3). Interestingly, Ge4Se3Te transformed from the hexagonal into the rhombohedral phase with only approximate to 2% I-V-VI2-alloying (I = Li, Na, K, Cu, Ag; V = Sb, Bi; VI = Se, Te). According to the calculated results of Ge0.82Ag0.09Bi0.09Se0.614Te0.386 single-crystal grown via AgBiTe2-alloying, it exhibits a higher valley degeneracy than the hexagonal Ge4Se3Te. For instance, AgBiTe2-alloying induces a strong band convergence and band inversion effect, resulting in a significantly enhanced Seebeck coefficient and power factor with a similar n(H) from 17 mu V K-1 and 0.63 mu W cm(-1) K-2 for pristine Ge4Se3Te to 124 mu V K-1 and 5.97 mu W cm(-1) K-2 for 12%AgBiTe2-alloyed sample, respectively. Moreover, the sharply reduced phonon velocity, nano-domain wall structure, and strong anharmonicity lead to low lattice thermal conductivity. As a result, a record-high average ZT approximate to 0.95 over 323-773 K with an excellent ZT approximate to 1.30 is achieved at 723 K.
Improving the thermoelectric performance of p-type PbSe via synergistically enhancing the Seebeck coefficient and reducing electronic thermal conductivity

Zhiwei Huang,Dongyang Wang,Caiyun Li,Jinfeng Wang,Guangtao Wang,Li-Dong Zhao

DOI: https://doi.org/10.1039/c9ta13927c

IF: 11.9

2020-01-01

Journal of Materials Chemistry A

Abstract:CdTe alloying dramatically enhanced the thermoelectric performance of p-type PbSe by enhancing Seebeck coefficients and reducing electronic thermal conductivity.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Achieving High Thermoelectric Performance by NaSbTe 2 Alloying in GeTe for Simultaneous Suppression of Ge Vacancies and Band Tailoring

Sichen Duan,Wenhua Xue,Honghao Yao,Xinyu Wang,Chen Wang,Shan Li,Zongwei Zhang,Li Yin,Xin Bao,Lihong Huang,Xiaodong Wang,Chen Chen,Jiehe Sui,Yue Chen,Jun Mao,Feng Cao,Yumei Wang,Qian Zhang

DOI: https://doi.org/10.1002/aenm.202103385

IF: 27.8

2021-12-16

Advanced Energy Materials

Abstract:Abstract GeTe alloys have attracted wide attention due to their high conversion efficiency. However, pristine GeTe possesses intrinsically massive Ge vacancies, leading to a very high hole concentration (10 21 cm −3 ). Herein, a decreased carrier concentration is realized by alloying NaSbTe 2 in GeTe due to the increased formation energy of Ge vacancies. This alloying also lowers energy separation between the valence bands in the rhombohedral GeTe and induces two extra valence band pockets around the Fermi surface along Γ‐L and L‐W in the cubic GeTe, all of which contributes to the higher power factors over a wide temperature range. Combined with the low lattice thermal conductivities due to plenty of dislocations and strains as a result of the crystallographic disorder of Na, Ge, and Sb, a maximum zT ≈ 2.35 at 773 K and a zT ave of 1.33 from 300 to 773 K are achieved in (GeTe) 90 (NaSbTe 2 ) 10 .

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Synergistically Optimized Thermal Conductivity and Carrier Concentration in GeTe by Bi–Se Codoping

Liang Xu,Gang Wu,Ruoyu Wang,Zipeng Yan,Jianfeng Cai,Juanxuan Yang,Xuemei Wang,Jun Luo,Xiaojian Tan,Guoqiang Liu,Jun Jiang

DOI: https://doi.org/10.1021/acsami.2c00546

2022-03-17

Abstract:The GeTe compound has been revealed to be an outstanding thermoelectric compound, while its inherent high thermal conductivity restricts further improvement in its performance. Herein, we report a study on the synergistic optimization of the thermoelectric performance of GeTe by Bi–Se codoping. It is shown that the introduction of Bi decreases the carrier concentration and increases the structural parameter of the interaxial angle. With Se doping in the Te site, the lattice thermal conductivity is markedly reduced, while the carrier mobility is slightly influenced. Compared with the singly Se-doped GeTe, the Ge1–xBixTe1–ySey samples are more closed to a cubic phase, as indicated by the larger interaxial angle. On account of the reduction of carrier concentration and thermal conductivity, a ZTmax of 1.80 at 665 K and a high ZTave of 1.39 (400–800 K) are obtained in Ge0.94Bi0.06Te0.85Se0.15. This work reveals that the interaxial angle is vital to the performance optimization of rhombohedral GeTe.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.2c00546.Definition and calculation of the interaxial angle, micromorphology of the sample, primitive cell lattice constant calculation, plane distance calculation, and interaxial angle and Te–Ge–Te atomic chain and weighted mobility (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Band flattening and phonon-defect scattering in cubic SnSe–AgSbTe2 alloy for thermoelectric enhancement

Hongxiang Wang,Haoyang Hu,Na Man,Chenglong Xiong,Yukun Xiao,Xiaojian Tan,Guoqiang Liu,Jun Jiang

DOI: https://doi.org/10.1016/j.mtphys.2020.100298

IF: 11.021

2021-01-01

Materials Today Physics

Abstract:With multiple band valleys and intrinsic low thermal conductivity, rock-salt SnSe possesses great potential as a promising thermoelectric material. Herein, we prepare cubic SnSe–AgSbTe2 alloy and demonstrate the synergistically optimized electronic and thermal transport properties. For the former, AgSbTe2 alloying can tune the Fermi surface and promote the band flattening, concurrently improving the density of state effective mass and carrier concentration. For the latter, the strong phonon-defect scattering caused by AgSbTe2 alloying contributes to a great reduction of lattice thermal conductivity. Collectively, an obviously enhanced ZT max of 1.00 at 820 K and ZT ave of 0.70 (300–820 K) are achieved in Sn0.5Ag0.25Sb0.25Se0.5Te0.5. Moreover, AgSbTe2 alloying can also improve the mechanical property and the Vickers hardness reaches 1.90 Gpa, which is over four times higher than that of pristine SnSe.

materials science, multidisciplinary,physics, applied
Modulating structures to decouple thermoelectric transports leads to high performance in polycrystalline SnSe

Yuping Wang,Shulin Bai,Haonan Shi,Qian Cao,Bingchao Qin,Li-Dong Zhao

DOI: https://doi.org/10.1039/d3ta06373a

IF: 11.9

2023-11-06

Journal of Materials Chemistry A

Abstract:In recent years, the thermoelectric properties of SnSe crystals have been rather impressive, while those of polycrystalline SnSe are not ideal due to the grain boundary scattering, which results in impaired carrier mobility and electrical transport. In this work, we introduce the tetragonal-structure AgInSe2 in the SnSe matrix, which not only modifies the crystal structure symmetry to boost carrier mobility but also enlarges effective mass by inducing resonant energy levels near the valence bands. The compromise on carrier mobility and effective mass leads to a substantial optimization on the electrical transport in the measured temperature range, realizing a peak power factor (PF) value of ~ 7.1 μW cm-1 K-2 in the 1.5% AgInSe2 alloyed sample, which exhibits nearly 2 times enhancement compared to the unalloyed sample. Subsequently, Ge alloying was introduced to further suppress the phonon transport, leading to significantly suppressed lattice thermal conductivities by constructing microstructural point defects. The successive modulation on crystal, band, and microscopic structures facilitate effective phonon-electron decoupling for thermoelectric transports, favoring a prominent peak ZT of ~ 1.6 at 773 K in the 0.75% Ge-alloyed (SnSe)0.985(AgInSe2)0.015 sample. Meanwhile, our study provides a systematic strategy to decouple the phonon-electron transports and enhance thermoelectric performance by modulating various aspects of structures.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Enhancing thermoelectric performance in GeTe through Ge enrichment regulation and AgCuTe alloying

Jingyi Lyu,Jingfeng Li,Wenwei Yang,Zhixing Chen,Zijie Ren,Zhanpeng Zhao,Shenghua Liu,Jing Shuai

DOI: https://doi.org/10.1016/j.cej.2024.149695

IF: 15.1

2024-02-22

Chemical Engineering Journal

Abstract:Germanium telluride (GeTe) exhibits substantial potential as a thermoelectric material well-suited for mid-temperature applications. The presence of a significant amount of off-stoichiometric Ge leads to the formation of Ge precipitates and vacancies, which exert a pronounced influence on the electrical and thermal transport properties of GeTe. In this study, a heat treatment process is initially applied to alleviate Ge enrichment within pristine GeTe, resulting in the achievement of a uniform distribution of Ge precipitates throughout the matrix. Subsequently, we coarsely optimize the carrier concentration through Bi counter-doping, thereby attaining the desired range for optimal performance. Notably, we finely adjust the Ge/Te ratio through AgCuTe alloying, effectively modulating Ge precipitation, reducing lattice thermal conductivity, and enhancing the thermoelectric performance of GeTe. Consequently, the synthesized sample (Ge 0.94 Bi 0.06 Te) 0.98 (AgCuTe) 0.02 exhibits a peak ZT value of approximately 2.27 at 773 K, with an average ZT value of approximately 1.38 within the temperature range of 323 to 773 K, making this material as a prominent candidate for medium-temperature thermoelectric applications.

engineering, chemical, environmental
Simultaneously optimized thermoelectric performance of n-type Cu2Se alloyed Bi2Te3

Jie Chen,Deyu Bao,Qiang Sun,Wei-Di Liu,Can Liu,Jun Tang,Lei Yang,Dali Zhou,Matthew S. Dargusch,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.jssc.2021.121987

IF: 3.3

2021-04-01

Journal of Solid State Chemistry

Abstract:To achieve the optimized performance and the widespread application of thermoelectric materials, it is crucial to decouple the highly interrelated thermoelectric parameters of materials. In this study, we illustrate that phonon and carrier transport properties of n-type Bi2Te3-based composites can be simultaneously optimized through alloying Cu2Se. Owing to the chemical reactions between the Bi2Te3 matrix and the Cu2Se additives during the sample preparation, the carrier concentration and density-of-states effective mass can be tuned to optimize the carrier transport properties, while the lattice thermal conductivity can be reduced by introducing hierarchical structures including point defects, Cu7Te5 inclusions, phase boundaries and localized Te-deficient regions. As a result, an enhanced thermoelectric performance is achieved compared with pristine Bi2Te3. Our study indicates the alloying Cu2Se can synergistically control the thermoelectric properties of Bi2Te3.

chemistry, physical, inorganic & nuclear
Electrical and Thermal Transport Properties of Ge1–xPbxCuySbyTeSe2y

Yang Jin,Dudi Ren,Yuting Qiu,Li‐Dong Zhao

DOI: https://doi.org/10.1002/adfm.202304512

IF: 19

2023-07-07

Advanced Functional Materials

Abstract:The thermoelectric performance of GeTe achieves a successive enhancement through equilibrating the carrier and phonon transport via stepwise alloying with Pb and CuSbSe2. A maximum ZT reaches 2.2 in Ge0.925Pb0.075Cu0.005Sb0.005TeSe0.01, doubling compared with the pristine GeTe. This study provides a new insight for optimizing thermoelectric performance by equilibrating interrelated thermoelectric parameters. Balancing the contradictory relationship between thermoelectric parameters, such as effective mass and carrier mobility, is a challenge to optimize thermoelectric performance. Herein, the exceptional thermoelectric performance is realized in GeTe through collaboratively optimizing the carrier and phonon transport via stepwise alloying Pb and CuSbSe2. The formation energy of Ge vacancy is efficiently bolstered by alloying Pb, which reduces carrier density and carrier scattering to maintain superior carrier mobility in GeTe. Additionally, CuSbSe2, acting as an n‐type dopant, further modulates carrier density and validly equilibrates carrier mobility and effective mass. Accordingly, the promising power factor of 45 μW cm−1 K−2 is achieved at 723 K. Meanwhile, point defects are found to significantly suppress phonons transport to descend lattice thermal conductivity by Pb and CuSbSe2 alloying, which barely impacts the carrier mobility. A combination with superior carrier mobility and lower lattice thermal conductivity, a maximum ZT of 2.2 is attained in Ge0.925Pb0.075Cu0.005Sb0.005TeSe0.01, which corresponds to a 100% promotion compared with that of intrinsic GeTe. This study provides a new indicator for optimizing carrier and phonon transport properties by balancing interrelated thermoelectric parameters.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag2S0.5Se0.5 Via Dual‐Phase Engineering

Hao Wu,Xiao‐Lei Shi,Yuanqing Mao,Meng Li,Wei‐Di Liu,De‐Zhuang Wang,Liang‐Cao Yin,Min Zhu,Yifeng Wang,Jingui Duan,Qingfeng Liu,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/aenm.202302551

IF: 27.8

2023-10-04

Advanced Energy Materials

Abstract:The compromise between plasticity and thermoelectric performance limits the development of Ag2S‐based thermoelectrics. This work shows that Ag2Te‐alloyed Ag2S0.5Se0.5 bulk material achieves a competitively high near‐room‐temperature figure of merit of ≈0.43 at 323 K and an ultra‐high bending strain of ≈32.5% without cracks. Inorganic semiconductor Ag2S with excellent plasticity is highly desired in flexible and wearable thermoelectrics. However, the compromise between plasticity and thermoelectric performance limits the advances in Ag2S‐based thermoelectric materials and their devices. Here, a 0.5 mol.% Ag2Te‐alloyed Ag2S0.5Se0.5 bulk material is designed, which has a competitively high near‐room‐temperature figure of merit of ≈0.43 at 323 K and an ultra‐high bending strain of ≈32.5% without cracks. Introducing Ag2Te can optimize the carrier concentration and mobility of the Ag2S0.5Se0.5 matrix due to its metal‐like conducting features, leading to a maximum power factor of ≈6 μW cm−1 K−2. Simultaneously, Ag2Te induces Ag‐poor amorphous phase boundaries, serving as buffer layers to enhance the overall plasticity. Moreover, such amorphous phase boundaries combined with multiscale phonon scattering sources can significantly suppress the lattice thermal conductivity to ≈0.28 W m−1 K−1 at 323 K, leading to a high figure of merit. This study demonstrates an innovative route to simultaneously boost the thermoelectric performance and plasticity of ductile semiconductors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Scattering Mechanisms and Compositional Optimization of High‐Performance Elemental Te as a Thermoelectric Material

Yehao Wu,Qi Zhang,Feng Liu,Teng Fang,Tiejun Zhu,Xinbing Zhao

DOI: https://doi.org/10.1002/aelm.202000038

IF: 6.2

2020-03-10

Advanced Electronic Materials

Abstract:p‐Type elemental tellurium (Te) has been found to be a promising thermoelectric (TE) material due to its high band degeneracy near the valence band maximum, and has exhibited a high zT ≈ 1.0 above 600 K. However, when forming Te1−xSex solid solutions, the maximal zTs are reduced because of the severely decreased carrier concentration. It is demonstrated that Se alloying is beneficial for enhancing TE performance of elemental Te provided the carrier concentration is optimized. Through Se alloying, the lattice thermal conductivity is remarkably suppressed by the induced large mass and strain field fluctuation, while the power factor can be maintained at a relatively high value as a result of the moderate alloying scattering potential, the unchanged density‐of‐state effective mass, and the optimized carrier concentration in Te1−xSex alloys. Notably, a positive temperature dependence of carrier mobility is observed near room temperature in Te1−xSex, which is proven to be caused by grain boundary scattering. A maximal zT ≈ 1.05 at 625 K is realized in Te0.93Se0.04As0.03 alloys, about 9% higher than the Se‐free Te. The conversion efficiency between 300 and 625 K is also improved ≈18% via Se alloying.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Xusheng Liu,Wu Wang,Yan Wang,Peng Li,Qiqi Tang,Baohai Jia,Zhenlong Huang,Yuan Lin,Binbin Jiang,Jiaqing He

DOI: https://doi.org/10.1002/aenm.202304029

IF: 27.8

2024-03-10

Advanced Energy Materials

Abstract:The low Seebeck coefficient and the high thermal conductivity deteriorate the thermoelectric properties of GeTe. Herein, the Seebeck coefficient is enhanced by promoting band convergency induced by the strongly correlated d, f electrons of rare earth elements. The doping of Pb and Bi causes avoided crossing and hierarchical structure, strengthening the full‐spectrum scattering of phonons and decelerating the sound velocity. As a highly promising thermoelectric material in the mid‐temperature region, pristine GeTe shows deteriorated thermoelectric properties due to the low Seebeck coefficient and the intrinsic high thermal conductivity. Herein, it is discovered that the introduction of strongly correlated d, f electrons by alloying rare‐earth atoms at Ge sites will increase the band effective mass and promote band convergency, which can largely improve the electric transport property. Moreover, the heavy atoms (Pb, Bi) doping induces optical phonon softening and the avoided crossing between acoustic and optical phonon branches, decelerating both optical and acoustic phonon velocities. The modulated composition wave from the fluctuated multi‐component distribution introduces a complicated hierarchical structure including point defects and nanoprecipitates, which provides all‐scale scattering sources for heat‐carrying phonons and results in low lattice thermal conductivity. Consequently, a high zT of 2.4 at 800 K can be obtained in the Ge0.86Pb0.09Bi0.03Ce0.005Te sample due to the combination of strong correlation for d, f electrons and the full‐spectrum scattering for phonons. This work provides an effective strategy to increase the thermoelectric performance of IV–VI compounds by combining the modulated band structure and the softening phonon dispersion.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels

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