Total Dose Effects and Bias Instabilities of (NH4)2S Passivated Ge MOS Capacitors with HfxZr1–xOy Thin Films

Yifei Mu,Yuxiao Fang,Ce Zhou Zhao,Chun Zhao,Qifeng Lu,Yanfei Qi,Ruowei Yi,Li Yang,Ivona Z. Mitrovic,Stephen Taylor,Paul R. Chalker

DOI: https://doi.org/10.1109/tns.2017.2768566

IF: 1.703

2017-01-01

IEEE Transactions on Nuclear Science

Abstract:The effects of biased irradiation on Ge MOS capacitors with HfxZr1-xOy(0.43 < x < 1) gate dielectrics have been investigated. These devices were irradiated by a 662-KeV Cs-137 gamma-ray radiation source with 0.5 or -0.5 V gate bias. Prior to irradiation exposure, leakage behavior and bias-instability of HfxZr1-xOy films were also examined. Gate leakage current density increases with the increasing of Zr composition in gate oxide. In addition, Zr-containing dielectrics under positive bias (PB) exhibited more oxide negative trapped charges than that of HfO2, which suggested that the oxygen-vacancy concentration in HfxZr1-xOy was increased by the addition of Zr. Larger flat-band voltage shifts (Delta V-FB) were extracted under positive biased irradiation than the bias only results. The results indicate that radiation-induced interface traps (Delta N-it) are the dominant factor for Delta V-FB in HfO2 thin films, whereas the radiation response for Zr-containing dielectrics under PB was mainly due to oxide traps. Under negative biased irradiation, Delta V-FB was attributed to the combined effect of the net oxide trapped charges and the passivation of Ge dangling bonds at the Ge/high-k interface. Additionally, both bias-induced and radiation-induced charge trapping have a crucial effect on radiation response of HfxZr1-xOy at each dose level. HfxZr1-xOy is identified as a promising gate dielectric for advanced complementary metal-oxide-semiconductor technologies.