Bias-stress Stability and Radiation Response of Solution-Processed AlOx Dielectrics Investigated by On-Site Measurements

Y. X. Fang,C. Zhao,I. Z. Mitrovic,S. Hall,L. Yang,C. Z. Zhao

DOI: https://doi.org/10.1016/j.mee.2019.111113

IF: 2.3

2019-01-01

Microelectronic Engineering

Abstract:In this work, the effects of biased irradiation on solution-processed and atomic layer deposited (ALD) AlOx thin films MOS capacitors were investigated by an on-site technique. The devices were irradiated by a 662-KeV Cs-137 gamma-ray radiation source under different positive/negative gate biases. The radiation time was up to 10(5) s and the total dose was around 92 Gy. It has been found that radiation could result in reversibility of flat-band voltage shifts (Delta V-FB)of solution-processed AlOx MOS capacitors, which were further analyzed through calculating the radiation induced oxide traps (Delta N-ot) in AlOx thin film and interface traps at AlOx/Si interface (Delta N-it). Additionally, solution-processed AlOx MOS capacitors exhibit more radiation induced charges compared to those fabricated by ALD, which indicates that solution-processed AlOx thin films contain abundant precursor impurities and bonded oxygen.