Abstract:An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15-31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.

Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3 μm

Heat-sink Free CW Operation of Injection Microdisk Lasers Grown on Si Substrate with Emission Wavelength Beyond 13 Μm

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Coherent mode-combined ultra-narrow-linewidth single-mode micro-disk laser

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Elevated Temperature Lasing from Injection Microdisk Lasers on Silicon

Continuous-wave subwavelength microdisk lasers at λ = 153 µm

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Continuous-wave Subwavelength Microdisk Lasers at Λ = 153 Μm

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Continuous-wave Electrically Injected GaN-on-Si Microdisk Laser Diodes

Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100)

Room-temperature Electrically Pumped InGaN-based Microdisk Laser Grown on Si

Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

1.3 Μm InAs/GaAs Quantum‐dot Laser Monolithically Grown on Si Substrates Operating over 100°C

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

Electrically-Pumped Continuous-Wave Quantum-Dot Distributed Feedback Laser Array on Silicon

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates