Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Electrically-Pumped Continuous-Wave Quantum-Dot Distributed Feedback Laser Array on Silicon

Monolithic Quantum-Dot Distributed Feedback Laser Array on Silicon

Tunable Quantum Dot Lasers Grown Directly on Silicon

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance

Low-noise 13 Μm InAs/GaAs Quantum Dot Laser Monolithically Grown on Silicon

Monolithic Quantum Dot Discrete Mode Laser on SOI

High-performance InAs/GaAs Quantum-Dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics

Long Lifetime Quantum-Dot Laser Monolithically Grown on Silicon

InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics

High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

Emission Characteristics of All-Silicon Distributed Feedback Lasers with a Wide Gain Range