Enhancing Thermoelectric Performance in Hierarchically Structured BiCuSeO by Increasing Bond Covalency and Weakening Carrier–phonon Coupling

Guang-Kun Ren,Shan-Yu Wang,Ying-Cai Zhu,Kyle J. Ventura,Xing Tan,Wei Xu,Yuan-Hua Lin,Jihui Yang,Ce-Wen Nan

DOI: https://doi.org/10.1039/c7ee00464h

IF: 32.5

2017-01-01

Energy & Environmental Science

Abstract:Improved thermoelectric performance of BiCuSeO via increased bond covalency and carrier mobility.

What problem does this paper attempt to address?

Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

Jun Tang,Rui Xu,Jian Zhang,Di Li,Weiping Zhou,Xiaotong Li,Zhihe Wang,Feng Xu,Guodong Tang,Guang Chen

DOI: https://doi.org/10.1021/acsami.9b00958

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:The Seebeck coefficient and carrier mobility in reported doped BiCuSeO system are too small, which limits the improvement of thermoelectric performance. Here, we proposed a novel strategy for optimizing thermoelectric performance by increasing Seebeck coefficient and boosting carrier mobility. We demonstrate that light element Li doping boosts carrier mobility (7.39 cm2 V-1 s-1) due to largely reduced carrier scattering, which results in about 2-fold increase in carrier mobility as compared with reported Bi0.875Ba0.125CuSeO through modulation doping or microstructure texturing. Moreover, the Seebeck coefficient remarkably increases by contribution of spin entropy induced by magnetic ions Mn incorporation. The enhancement of Seebeck coefficient coupled with enhanced electrical conductivity result in high power factor. Furthermore, nanoprecipitates and dual-atom point defect leads to a significant reduction of lattice thermal conductivity. Therefore, a high ZT value of 0.9 was achieved at 873 K through optimizing power factor while maintaining low thermal conductivity. Our findings provide a new perspective for designing prospective thermoelectric materials.
Boosting Thermoelectric Performance of BiCuSeO by Improving Carrier Mobility Through Light Element Doping and Introducing Nanostructures

Tiantian He,Xiaotong Li,Jun Tang,Xu'nuo Lou,Xinru Zuo,Yao Zheng,Dewei Zhang,Guodong Tang

DOI: https://doi.org/10.1016/j.jallcom.2020.154755

IF: 6.2

2020-01-01

Journal of Alloys and Compounds

Abstract:BiCuSeO oxyselenides are promising thermoelectric materials because of their high stability and high thermoelectric performance. Here, a new approach is proposed that Li and Ca are incorporated into BiCuSeO to achieve synergistically optimized electrical and thermal transport properties. Arising from partial substitutions of Bi3+ by Ca2+ and Li+, the carrier concentration significantly increased because of massively introduced hole carriers. More importantly, we reveal that the carrier mobility can be enhanced by light element Li doping arising from largely reduced carrier scattering. The largest carrier mobility value reaches 8.06 cm(2)V(-1)s(-1), which is significantly enhanced as compared with previously reported doped BiCuSeO. As a result, the electrical conductivity increases to 288 Scm(-1) and the power factor reaches as high as 804 mu W m(-1)K(-2) at room temperature in Bi0.84Li0.08Ca0.08CuSeO, which is about 288 and 53 folds as compared with pristine BiCuSeO, respectively. Furthermore, Li and Ca codoping not only leads to dual-atomic point-defects scattering, but also can effectively scatter high-frequency phonons through introducing calcium oxide nanoprecipitates, resulting in a low lattice thermal conductivity (0.54 Wm(-1) K-1 at 873 K). The combination of optimized power factor and thermal conductivity contributes to a high thermoelectric figure of merit ZT (similar to 0.9 at 873 K) in Bi0.88Li0.06Ca0.06CuSeO. This study provides a new pathway for enhancing thermoelectric performance of BiCuSeO via light element doping and introducing nanostructures. (C) 2020 Elsevier B.V. All rights reserved.
Boosting Thermoelectric Performance via Weakening Carrier-Phonon Coupling in BiCuSeO-Graphene Composites

Zhifang Zhou,Jinming Guo,Yunpeng Zheng,Yueyang Yang,Bin Yang,Dengfeng Li,Wenyu Zhang,Bin Wei,Chang Liu,Jin-Le Lan,Ce-Wen Nan,Yuan-Hua Lin

DOI: https://doi.org/10.1002/smtd.202301619

IF: 12.4

Small Methods

Abstract:BiCuSeO is a promising oxygen-containing thermoelectric material due to its intrinsically low lattice thermal conductivity and excellent service stability. However, the low electrical conductivity limits its thermoelectric performance. Aliovalent element doping can significantly improve their carrier concentration, but it may also impact carrier mobility and thermal transport properties. Considering the influence of graphene on carrier-phonon decoupling, Bi0.88Pb0.06Ca0.06CuSeO (BPCCSO)-graphene composites are designed. For further practical application, a rapid preparation method is employed, taking less than 1 h, which combines self-propagating high-temperature synthesis with spark plasma sintering. The incorporation of graphene simultaneously optimizes the electrical properties and thermal conductivity, yielding a high ratio of weighted mobility to lattice thermal conductivity (144 at 300 K and 95 at 923 K). Ultimately, BPCCSO-graphene composites achieve exceptional thermoelectric performance with a ZT value of 1.6 at 923 K, bringing a ≈40% improvement over BPCCSO without graphene. This work further promotes the practical application of BiCuSeO-based materials and this facile and effective strategy can also be extended to other thermoelectric systems.
Enhanced thermoelectric performance of BiCuSeO through composite structuring with Pb-and La-doped components

Xiaoqiong Zuo,Rong Zhang,Yonghong Chen,Zhibin Wang,Biyu Xu,Zhipeng Zheng,Guopeng Zhou,Yang Zhang,Kewei Wang,Sheng Yang,Yin Zhong,Yanhua Fan,Bo Feng

DOI: https://doi.org/10.1007/s10854-024-13587-0

2024-09-27

Journal of Materials Science Materials in Electronics

Abstract:BiCuSeO is the most promising mid-high temperature thermoelectric material for application. The thermoelectric properties of BiCuSeO are greatly improved by the composited structure based on Pb-doped samples with high carrier concentration and La-doped samples with high mobility. The synthesis of composited samples includes powder preparation by mechanical alloying and block forming by high-temperature spark plasma sintering. The experimental results indicate that the composited structure composed of Pb-doped high carrier sample and La-doped high- mobility sample can effectively enhance the power factor, for that reason the composited structure enables carriers to migrate through the high-mobility region, which is conducive to improving the electrical conductivity. The thermal conductivity is maintained at a low level because there exist a lot of two-phase interfaces in the modulation samples, which is conducive to the scattering of low-frequency phonons. Through the double coordination adjustment of electron and phonon, the highest ZT was increased to ~ 1.26 at 873 K.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Enhanced Thermoelectric Performance of Bicuseo by Increasing Seebeck Coefficient Through Magnetic Ion Incorporation

Qiang Wen,Cheng Chang,Lin Pan,Xiaotong Li,Teng Yang,Huaihong Guo,Zhihe Wang,Jian Zhang,Feng Xu,Zhidong Zhang,Guodong Tang

DOI: https://doi.org/10.1039/c7ta03659k

IF: 11.9

2017-01-01

Journal of Materials Chemistry A

Abstract:Thermoelectric performance of BiCuSeO can be remarkably enhanced by increasing spin entropy and Seebeck coefficient through magnetic ion incorporation.
Enhanced Thermoelectric Performance of a BiCuSeO System Via Band Gap Tuning.

Yong Liu,Jinle Lan,Wei Xu,Yaochun Liu,Yan-Ling Pei,Bo Cheng,Da-Bo Liu,Yuan-Hua Lin,Li-Dong Zhao

DOI: https://doi.org/10.1039/c3cc44578j

IF: 4.9

2013-01-01

Chemical Communications

Abstract:Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.
Enhanced Thermoelectric Performance of BiCuSeO Via Dual-Doping in Both Bi and Cu Sites

Qiang Wen,Huichen Zhang,Feng Xu,Lizhe Liu,Zhihe Wang,Guodong Tang

DOI: https://doi.org/10.1016/j.jallcom.2017.04.031

IF: 6.2

2017-01-01

Journal of Alloys and Compounds

Abstract:We investigated the effects of dual-doping in both Bi and Cu sites on the thermoelectric performance of BiCuSeO. The electrical conductivity of Ba and Co dual-doped samples was largely enhanced compared to pristine BiCuSeO due to enhanced carrier concentration. Interestingly, Ba and Co dual-doped samples keep high Seebeck coefficient values as compared to Ba single doped sample, resulting in high power factor. While their thermal conductivities were significantly depressed by enhanced point defect scattering. These favorable factors lead to enhanced ZT of Ba and Co dual-doped samples as compared with Ba single doped sample, Co single doped sample and pristine BiCuSeO. ZT value of 0.082 at 350 K for Ba0.125Bi0.85Cu0.85Co0.15SeO was determined by nearly 32 times higher than that of pristine BiCuSeO. Moreover, this value is about five times higher than that of promising Ba0.125Bi0.875CuSeO. It reveals that dual-doping into both Cu and Bi sites is an effective way for optimizing thermoelectric properties of BiCuSeO. This study opens a new pathway for broadening and designing prospective thermoelectric materials. (C) 2017 Elsevier B.V. All rights reserved.
Superior Carrier Mobility Enabled by the Charge Channel Leads to Enhanced Thermoelectric Performance in BiCuSeO Composites

Zhanxiang Yin,He Zhang,Yaqiang Wang,Yi Wu,Youbo Xing,Le Deng,Pan He,Xin Guo

DOI: https://doi.org/10.1002/smll.202304430

IF: 13.3

2023-08-25

Small

Abstract:Single‐wall carbon nanotubes embedded in BiCuSeO‐based materials, as charge channels and phase interfaces, can greatly enhance the carrier mobility while strengthening the phonon scattering, triggering an enhancement in zT as well as a mechanical property. This work proposes an efficient approach for improving the carrier transport in oxide thermoelectric materials and potentially driving the application of BiCuSeO materials. BiCuSeO oxyselenides possess a highlighted thermoelectric performance among oxides, which originates from their intrinsically low thermal conductivity. However, intrinsic factors causing low thermal transport are also detrimental to carrier transport, leading to ultralow carrier mobility and relatively low electrical transport properties. Here, high‐conductivity single‐wall carbon nanotubes (SWCNTs) are adopted as the charge channels to be embedded in a BiCuSeO‐based matrix, providing a transport pathway for charge carriers. The results show that carrier mobility is increased to 188 cm2 V−1 s−1 due to the SWCNTs composited, triggering an enhancement in electrical transport properties. Besides, the SWCNTs embedded in the matrix introduce abundant interfaces, suppressing phonon transport and depressing lattice thermal conductivity. With these achievements, a maximum zT of 0.84 at 818 K is realized in the composite with 0.1 wt% SWCNTs. The mechanical property of the composites is strengthened as well because of the SWCNTs. The work indicates that the SWCNTs, as the charge channels, propose an effective approach for enhancing carrier mobility in BiCuSeO‐based materials, finally optimizing the thermoelectric performance as well as the mechanical property.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Synergistically Optimizing Electrical and Thermal Transport Properties of BiCuSeO Via a Dual‐Doping Approach

Yong Liu,Li-Dong Zhao,Yingcai Zhu,Yaochun Liu,Fu Li,Meijuan Yu,Da-Bo Liu,Wei Xu,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1002/aenm.201502423

IF: 27.8

2016-01-01

Advanced Energy Materials

Abstract:The layered oxyselenide BiCuSeO system is known as one of the high‐performance thermoelectric materials with intrinsically low thermal conductivity. By employing atomic, nano‐ to mesoscale structural optimizations, low thermal conductivity coupled with enhanced electrical transport properties can be readily achieved. Upon partial substitution of Bi3+ by Ca2+ and Pb2+, the thermal conductivity can be reduced to as low as 0.5 W m−1 K−1 at 873 K through dual‐atomic point‐defect scattering, while a high power factor of ≈1 × 10−3 W cm−1 K−2 is realized over a broad temperature range from 300 to 873 K. The synergistically optimized power factor and intrinsically low thermal conductivity result in a high ZT value of ≈1.5 at 873 K for Bi0.88Ca0.06Pb0.06CuSeO, a promising candidate for high‐temperature thermoelectric applications. It is envisioned that the all‐scale structural optimization is critical for optimizing the thermoelectricity of quaternary compounds.
Optimizing thermoelectric properties of BiSe through Cu additive enhanced effective mass and phonon scattering

Xing-Chen Shen,Xiao Zhang,Bin Zhang,Guo-Yu Wang,Jian He,Xiao-Yuan Zhou

DOI: https://doi.org/10.1007/s12598-020-01491-5

IF: 6.318

2020-07-17

Rare Metals

Abstract:Known as a weak topological insulator (TI), BiSe structurally exhibits alternating stacks of quantum spin Hall bilayer ("Bi2") and three-dimensional TI layer ("Bi2Se3"). The low lattice thermal conductivity of BiSe due to the presence of Bi2 bilayers promises potentially good thermoelectric performance. Herein, the thermoelectric properties of nominal Bi1−xCuxSe samples were studied as the functions of the content of Cu additive and temperature. It is found that Cu additives in BiSe (1) profoundly affect the texture of densified polycrystalline samples by inclining the crystallographic c-axis parallel toward the pressure direction in the densification process, (2) increase considerably the effective mass and thus the Seebeck coefficient, and (3) yield point defects and Cu–Se secondary phases that effectively scatter heat-carrying phonons. As a result, the optimized electrical and thermal properties yield a thermoelectric figure of merit of zT ~ 0.29 in Bi1−xCuxSe (x = 0.03) sample at 467 K in parallel to the pressure direction and a zT ~ 0.20 at 468 K in the perpendicular direction.<h3 class="a-plus-plus">Graphic abstract</h3>

materials science, multidisciplinary,metallurgy & metallurgical engineering
Complex Electronic Structure and Compositing Effect in High Performance Thermoelectric BiCuSeO.

Guang-Kun Ren,Shanyu Wang,Zhifang Zhou,Xin Li,Jiong Yang,Wenqing Zhang,Yuan-Hua Lin,Jihui Yang,Ce-Wen Nan

DOI: https://doi.org/10.1038/s41467-019-10476-7

IF: 16.6

2019-01-01

Nature Communications

Abstract:BiCuSeO oxyselenides are promising thermoelectric materials, yet further thermoelectric figure of merit ZT improvement is largely limited by the inferior electrical transport properties. The established literature on these materials shows only one power factor maximum upon carrier concentration optimization, which is typical for most thermoelectric semiconductors. Surprisingly, we found three power factor maxima when doping Bi with Pb. Based on our first-principles calculations, numerical modeling, and experimental investigation, we attribute the three maxima to the Fermi energy optimization, band convergence, and compositing effect due to in situ formed PbSe precipitates. Consequently, three ZT peaks of 0.9, 1.1, and 1.3 at 873 K are achieved for 4, 10, and 14 at.% Pb-doped samples, respectively, revealing the significance of complex electronic structure and multiple roles of Pb in BiCuSeO. The results establish an accurate band structure characterization for BiCuSeO and identify the role of band convergence and nanoprecipitation as the driving mechanism for high ZT.
Simultaneously optimized thermoelectric performance of n-type Cu2Se alloyed Bi2Te3

Jie Chen,Deyu Bao,Qiang Sun,Wei-Di Liu,Can Liu,Jun Tang,Lei Yang,Dali Zhou,Matthew S. Dargusch,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.jssc.2021.121987

IF: 3.3

2021-04-01

Journal of Solid State Chemistry

Abstract:To achieve the optimized performance and the widespread application of thermoelectric materials, it is crucial to decouple the highly interrelated thermoelectric parameters of materials. In this study, we illustrate that phonon and carrier transport properties of n-type Bi2Te3-based composites can be simultaneously optimized through alloying Cu2Se. Owing to the chemical reactions between the Bi2Te3 matrix and the Cu2Se additives during the sample preparation, the carrier concentration and density-of-states effective mass can be tuned to optimize the carrier transport properties, while the lattice thermal conductivity can be reduced by introducing hierarchical structures including point defects, Cu7Te5 inclusions, phase boundaries and localized Te-deficient regions. As a result, an enhanced thermoelectric performance is achieved compared with pristine Bi2Te3. Our study indicates the alloying Cu2Se can synergistically control the thermoelectric properties of Bi2Te3.

chemistry, physical, inorganic & nuclear
Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies.

Yong Liu,Li-Dong Zhao,Yaochun Liu,Jinle Lan,Wei Xu,Fu Li,Bo-Ping Zhang,David Berardan,Nita Dragoe,Yuan-Hua Lin,Ce-Wen Nan,Jing-Feng Li,Hongmin Zhu

DOI: https://doi.org/10.1021/ja2091195

IF: 15

2011-01-01

Journal of the American Chemical Society

Abstract:A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu(1-x)SeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu(2)Se(2))(2-) layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 10(3) S m(-1) for Bicu(0.975)Seo at 650 °C, much larger than 470 S m(-1) for pristine BiCuSeO. Featured with very low thermal conductivity (∼0.5 W m(-1) K(-1)) and a large Seebeck coefficient (+273 μV K(-1)), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu(0.975)SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.
Enhanced Thermoelectric Performance of BiCuSeO Composites with Nanoinclusion of Copper Selenides

Yaochun Liu,Yiming Zhou,Jinle Lan,Chengcheng Zeng,Yuanhua Zheng,Bin Zhan,Boping Zhang,Yuanhua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1016/j.jallcom.2015.12.087

IF: 6.2

2016-01-01

Journal of Alloys and Compounds

Abstract:BiCuSeO oxyselenide is a promising oxide-based thermoelectric material in the moderate temperature range, but the low electrical conductivity inhibits its further application in the field of thermoelectric materials. In this paper, we report on the effects that composite structures have an enhancement to the electrical conductivity of BiCuSeO. Here, a series of two-phase nanocomposites comprising of BiCuSeO and Cu2Se have been synthesized by SPS. Images obtained via electron microscope reveal that the two constituents form the unique composites while retaining their individual morphological identities. Owing to the composite structure with a highly conductive nanoscale of copper selenides and sub-micrometer scale BiCuSeO, an enhancement to the thermoelectric performance is achieved. The ZT at 823 K is increased from 0.33 for pristine BiCuSeO to 0.44 by inserting 20 vol% Cu2Se. Our results state that the composite structure is an effective method to enhance the performance of BiCuSeO. (C) 2015 Elsevier B.V. All rights reserved.
Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu1.8S Via Carrier Concentration Regulation and Multiscale Phonon Scattering

Ying-Hao Zhao,Zhi-Hang Shan,Wei Zhou,Rui Zhang,Jun Pei,He-Zhang Li,Jing-Feng Li,Zhen-Hua Ge,Yuan-Bing Wang,Bo-Ping Zhang

DOI: https://doi.org/10.1021/acsaem.2c00414

IF: 6.4

2022-01-01

ACS Applied Energy Materials

Abstract:Copper sulfides (Cu2-xS) have become potential thermoelectric (TE) materials because of their high element abundance, low toxicity, and high performance. A series of Cu1.8-2xBi2xS1-3xSe3x (0 <= x <= 0.03) bulks were fabricated using mechanical alloying and spark plasma sintering. The main Cu1.8S phase was obtained in all compositions of 0 <= x <= 0.03, and marginal Cu1.96S and Cu2S phases were detected at 0.02 <= x <= 0.03, which is attributed to the volatilization of sulfur and selenium. Benefiting from the introduced extra electronics by Bi3+ doping, the carrier concentration was optimized in 2.31x10(21) cm(-3). Multiscale defects introduced by Bi-Se co-doping, including secondary phases, micropores, and point defects (Bi-Cu(center dot center dot), Se-S(x), and V-S(center dot center dot)), strongly scattered the phonons, leading to a drastically decreased thermal conductivity from 2.71 W m(-1) K-1 for Cu1.8S at 773 K to 0.80 Wm(-1) K-1 for Cu1.74Bi0.06S0.91Se0.09. A maximum ZT of 0.78 was achieved for Cu1.74Bi0.06S0.91Se0.09 at 773 K, which is 144% higher than that of Cu1.8S (0.32). The current stress test confirms that Bi doping could improve the stability of Cu1.8S by suppressing the Cu ion migration. Our work demonstrates that Bi-Se co-doping is an effective way to enhance the TE properties for Cu1.8S.
BiCuSeO Based Thermoelectric Materials: Innovations and Challenges

Wenxin Tang,Wanyu Qian,Shuanglin Jia,Ke Li,Zhifang Zhou,Jinle Lan,Yuan-Hua Lin,Xiaoping Yang

DOI: https://doi.org/10.1016/j.mtphys.2023.101104

IF: 11.021

2023-01-01

Materials Today Physics

Abstract:BiCuSeO has high Seebeck coefficient, low lattice thermal conductivity and excellent performance. At the same time, its abundant stock, low price, non-toxic and environmentally friendly raw materials and easy synthesis, makes it a new oxide thermoelectric material with great application prospects. This review firstly discusses and summarizes the preparation, properties including the structure, stability and thermoelectric properties and other basic characteristics of BiCuSeO. And then the performance optimization methods of BiCuSeO at home and abroad such as doping, compositing, texturization, vacancies and synergetic approaches in recent years are emphatically summarized and evaluated. Finally, a discussion of future possible strategies is proposed to aim at further enhancing the thermoelectric properties of similar materials and deepen related researches.
Enhanced Thermoelectric Performance of La-doped BiCuSeO by Tuning Band Structure

Yaochun Liu,Jingxuan Ding,Ben Xu,Jinle Lan,Yuanhua Zheng,Bin Zhan,Boping Zhang,Yuanhua Lin,Cewen Nan

DOI: https://doi.org/10.1063/1.4922492

IF: 4

2015-01-01

Applied Physics Letters

Abstract:Bi1−xLaxCuSeO ceramic bulks have been prepared by the spark plasma sintering method. Our results indicate that La-doping can lead to an obvious change of the band structure evidenced by the absorption spectra and electric transportation behaviors (e.g., m* and Seebeck coefficient). The variation of band structure results in a great enhancement of carrier mobility caused by a decreased energy offset between the primary and secondary valence bands. A maximum ZT value of 0.74 can be obtained in 8% La-doped BiCuSeO sample at 923 K, which is 37% higher than that of the pure BiCuSeO bulk. Our results reveal that band engineering is an effective way to enhance the thermoelectric properties of BiCuSeO system.
Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying

Mengxiang Yang,Manman Yang,Yiwen Zhang,Taichao Su,Hongyu Zhu

DOI: https://doi.org/10.1007/s10854-024-12985-8

2024-06-22

Journal of Materials Science Materials in Electronics

Abstract:Oxysulfides BiCuSO, with a natural superlattice structure, have extremely low thermal conductivity and high Seebeck coefficient. However, the thermoelectric performance of BiCuSO is restricted by its high electrical resistivity resulting from its low carrier concentration and Hall mobility. In this study, BiCuSO was rapidly prepared by one-step high pressure technique. The Pb doping at the Bi site of BiCuSO increases the carrier concentration and decreases the resistivity significantly, which results in an enhanced power factor of ~ 1.0 μWcm −1 K −2 at room temperature for Bi 0.97 Pb 0.03 CuSO. Meanwhile, substituting Se for S in BiCuSO not only improves the Hall mobility but also decreases the phonon thermal conductivity. Benefiting from the high power factor and low thermal conductivity induced by Pb doping and Se alloying, an enhanced ZT of ~ 0.17 at 673 K is obtained for the sample of Bi 0.97 Pb 0.03 CuS 0.55 Se 0.45 O.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Enhancing Thermoelectric Properties of (Cu2te)1−x-(Bicuteo)x Composites by Optimizing Carrier Concentration

Wenyu Zhang,Zhifang Zhou,Yueyang Yang,Yunpeng Zheng,Yushuai Xu,Mingchu Zou,Ce-Wen Nan,Yuan-Hua Lin

DOI: https://doi.org/10.3390/ma15062096

IF: 3.4

2022-01-01

Materials

Abstract:Because of the high carrier concentration, copper telluride (Cu2Te) has a relatively low Seebeck coefficient and high thermal conductivity, which are not good for its thermoelectric performance. To simultaneously optimize carrier concentration, lower thermal conductivity and improve the stability, BiCuTeO, an oxygen containing compound with lower carrier concentration, is in situ formed in Cu2Te by a method of combining self-propagating high-temperature synthesis (SHS) with spark plasma sintering (SPS). With the incorporation of BiCuTeO, the carrier concentration decreased from 8.1 × 1020 to 3.8 × 1020 cm−3, bringing the increase of power factor from ~1.91 to ~2.97 μW cm−1 K−2 at normal temperature. At the same time, thermal conductivity reduced from 2.61 to 1.48 W m−1 K−1 at 623 K. Consequently, (Cu2Te)0.95-(BiCuTeO)0.05 composite sample reached a relatively high ZT value of 0.13 at 723 K, which is 41% higher than that of Cu2Te.
Compositing effects for high thermoelectric performance of Cu2Se-based materials

Zhifang Zhou,Yi Huang,Bin Wei,Yueyang Yang,Dehong Yu,Yunpeng Zheng,Dongsheng He,Wenyu Zhang,Mingchu Zou,Jin-Le Lan,Jiaqing He,Ce-Wen Nan,Yuan-Hua Lin

DOI: https://doi.org/10.1038/s41467-023-38054-y

IF: 16.6

2023-04-27

Nature Communications

Abstract:Abstract Thermoelectric materials can realize direct conversion between heat and electricity, showing excellent potential for waste heat recovery. Cu 2 Se is a typical superionic conductor thermoelectric material having extraordinary ZT values, but its superionic feature causes poor service stability and low mobility. Here, we reported a fast preparation method of self-propagating high-temperature synthesis to realize in situ compositing of BiCuSeO and Cu 2 Se to optimize the service stability. Additionally, using the interface design by introducing graphene in these composites, the carrier mobility could be obviously enhanced, and the strong phonon scatterings could lead to lower lattice thermal conductivity. Ultimately, the Cu 2 Se-BiCuSeO-graphene composites presented excellent thermoelectric properties with a ZT max value of ~2.82 at 1000 K and a ZT ave value of ~1.73 from 473 K to 1000 K. This work provides a facile and effective strategy to largely improve the performance of Cu 2 Se-based thermoelectric materials, which could be further adopted in other thermoelectric systems.

multidisciplinary sciences

Enhancing Thermoelectric Performance in Hierarchically Structured BiCuSeO by Increasing Bond Covalency and Weakening Carrier–phonon Coupling

Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

Boosting Thermoelectric Performance of BiCuSeO by Improving Carrier Mobility Through Light Element Doping and Introducing Nanostructures

Boosting Thermoelectric Performance via Weakening Carrier-Phonon Coupling in BiCuSeO-Graphene Composites

Enhanced thermoelectric performance of BiCuSeO through composite structuring with Pb-and La-doped components

Enhanced Thermoelectric Performance of Bicuseo by Increasing Seebeck Coefficient Through Magnetic Ion Incorporation

Enhanced Thermoelectric Performance of a BiCuSeO System Via Band Gap Tuning.

Enhanced Thermoelectric Performance of BiCuSeO Via Dual-Doping in Both Bi and Cu Sites

Superior Carrier Mobility Enabled by the Charge Channel Leads to Enhanced Thermoelectric Performance in BiCuSeO Composites

Synergistically Optimizing Electrical and Thermal Transport Properties of BiCuSeO Via a Dual‐Doping Approach

Optimizing thermoelectric properties of BiSe through Cu additive enhanced effective mass and phonon scattering

Complex Electronic Structure and Compositing Effect in High Performance Thermoelectric BiCuSeO.

Simultaneously optimized thermoelectric performance of n-type Cu2Se alloyed Bi2Te3

Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies.

Enhanced Thermoelectric Performance of BiCuSeO Composites with Nanoinclusion of Copper Selenides

Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu1.8S Via Carrier Concentration Regulation and Multiscale Phonon Scattering

BiCuSeO Based Thermoelectric Materials: Innovations and Challenges

Enhanced Thermoelectric Performance of La-doped BiCuSeO by Tuning Band Structure

Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying

Enhancing Thermoelectric Properties of (Cu2te)1−x-(Bicuteo)x Composites by Optimizing Carrier Concentration

Compositing effects for high thermoelectric performance of Cu2Se-based materials