Abstract:Copper sulfides (Cu2–xS) have become potential thermoelectric (TE) materials because of their high element abundance, low toxicity, and high performance. A series of Cu1.8–2xBi2xS1–3xSe3x (0 ≤ x ≤ 0.03) bulks were fabricated using mechanical alloying and spark plasma sintering. The main Cu1.8S phase was obtained in all compositions of 0 ≤ x ≤ 0.03, and marginal Cu1.96S and Cu2S phases were detected at 0.02 ≤ x ≤ 0.03, which is attributed to the volatilization of sulfur and selenium. Benefiting from the introduced extra electronics by Bi3+ doping, the carrier concentration was optimized in 2.31×1021 cm–3. Multiscale defects introduced by Bi–Se co-doping, including secondary phases, micropores, and point defects (BiCu••, SeS×, and VS••), strongly scattered the phonons, leading to a drastically decreased thermal conductivity from 2.71 W m–1 K–1 for Cu1.8S at 773 K to 0.80 Wm–1 K–1 for Cu1.74Bi0.06S0.91Se0.09. A maximum ZT of 0.78 was achieved for Cu1.74Bi0.06S0.91Se0.09 at 773 K, which is 144% higher than that of Cu1.8S (0.32). The current stress test confirms that Bi doping could improve the stability of Cu1.8S by suppressing the Cu ion migration. Our work demonstrates that Bi–Se co-doping is an effective way to enhance the TE properties for Cu1.8S.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaem.2c00414.SPB model calculation of our work; method for the current stress test; calculation formulas for ZTeng and ηmax; temperature dependence of thermal properties of the Cu1.8–2xBi2xS1–3xSe3x (x = 0, 0.01, 0.02, 0.25, 0.03) samples; and repeatability test of electrical properties for the Cu1.74Bi0.06S0.91Se0.09 sample (PDF)This article has not yet been cited by other publications.

Boosting Thermoelectric Performance of BiCuSeO by Improving Carrier Mobility Through Light Element Doping and Introducing Nanostructures

Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

Synergistically Optimizing Electrical and Thermal Transport Properties of BiCuSeO Via a Dual‐Doping Approach

Enhanced thermoelectric performance of BiCuSeO through composite structuring with Pb-and La-doped components

Enhanced thermoelectric performance of Ca-doped BiCuSeO in a wide temperature range

Superior Carrier Mobility Enabled by the Charge Channel Leads to Enhanced Thermoelectric Performance in BiCuSeO Composites

Enhanced Thermoelectric Performance of BiCuSeO Via Dual-Doping in Both Bi and Cu Sites

Synergistically optimized electron and phonon transport of p-type BiCuSeO oxyselenides via Pb dopant and Te composite

Raising the Thermoelectric Performance in Pb/In-Codoped BiCuSeO by Alleviating the Contradiction between Carrier Mobility and Lattice Thermal Conductivity

Study on the Targeted Improvement Mechanism of the Carrier Concentration and Mobility of BiCuSeO Ceramics

Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies.

Complex Electronic Structure and Compositing Effect in High Performance Thermoelectric BiCuSeO.

Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu1.8S Via Carrier Concentration Regulation and Multiscale Phonon Scattering

High thermoelectric performance of oxyselenides: intrinsically low thermal conductivity of Ca-doped BiCuSeO

Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu 1.8 S via Carrier Concentration Regulation and Multiscale Phonon Scattering

Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying

Enhanced Thermoelectric Performance of Zn-doped Oxyselenides: BiCu1−x Zn X SeO

Electrical and Thermal Transport Behavior in Zn-Doped BiCuSeO Oxyselenides

Realizing synergistic optimization of electrical and thermal transport properties in BiCuSeO ceramics via multi-element doping

Boosting Thermoelectric Performance via Weakening Carrier-Phonon Coupling in BiCuSeO-Graphene Composites

Band Structure Manipulated by High Pressure-Assisted Te Doping Realizing Improvement in Thermoelectric Performance of BiCuSeO System