Abstract:A study has been made of the electrical behaviour of In-doped metal organic vapour phase epitaxy (MOVPE) layers of Hg(1-x)Cd(x)Te grown by the interdiffused multilayer process (imp) in order to establish the factors needed to obtain uniform extrinsic n-type layers with high electrical activity and mobility. Layers with x between 0.2 and 0.3 were grown on (100) CdTe and CdTeSe at 360-degrees-C using di-isopropyltelluride (DIPT) and doped with trimethylindium (TMIn) in two ways, depending on In concentration, [In]. For [In] > 1 x 10(17) cm-3 layers were doped with TMIn on the CdTe part of the imp cycle while for [In] in the range 1 X 10(15) to l X 10(17) cm-3 the TMIn memory of the growth system was used, resulting in doping on the HgTe part of the imp cycle because of a greater efficiency of incorporation. In profiles, which were determined by secondary-ion mass spectrometry (SIMS), are shown to depend on doping process due to TMIn partial pressure variations from adsorption effects. The layers, which were capped with CdTe to prevent inadvertent post-growth annealing from affecting the electrical activity of the In, were p type when undoped. On doping, as-grown layers become n type at 77 K at [In] approximately 1 x 10(16) cm-3 due to the concentration of donors exceeding the background concentration of Hg acceptor vacancies. The percentage of In electrically active is 33 % at [In] less-than-or-equal-to 2 x 10(18) cm-3 and 15-20 % at higher [In]. The 77 K Hall mobilities of layers, both p and n type, are low when [In] > 1 x 10(16) cm-3, probably because of high levels of compensation. Low temperature annealing to remove Hg vacancies, both ex situ and in situ, significantly improves the electrical properties. Electrical activity of the In increases to 100 % over the [In] range 1 x 10(15) to 2 x 10(18) cm-3 and to 40 % at higher concentrations. 77 K Hall mobility of the n-type layers increases and shows a dependence on carrier concentration and x consistent with lightly compensated material. Results are in agreement with In doping introducing autocompensating centres which anneal out on a low-temperature Hg-rich anneal.

Optical Homogeneity Analysis of Hg1−xCdxTe Epitaxial Layers: How to Circumvent the Influence of Impurity Absorption Bands?

Optical and Electronic Characterization on HgCdTe Materials

Spectra Analysis of Annealed Hg1−xCdxTe Molecular Beam Epitaxial Films

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

Study Of Impurity States In P-Type Hg1-Xcdxte Using Far-Infrared Spectroscopy

PHOTOLUMINESCENCE STUDY ON HG1-XCDXTE THIN-FILM IMPLANTED WITH AS ION

Optical Refractive and Reflective Properties of Hg1-Xcdxte

Arsenic-doped Narrow-Gap HgCdTe Epilayers Studied by Infrared Modulation Spectroscopy

Determination of structural defects in Hg1-xCdxTe multilayer materials

Cutoff Wavelength of Hg1-Xcdxte Epilayers by Infrared Photoreflectance Spectroscopy

Impurity Levels and Bandedge Electronic Structure in As-Grown Arsenic-Doped HgCdTe by Infrared Photoreflectance Spectroscopy

Anomalous Temperature Dependence of Absorption Edge in Narrow-Gap Hgcdte Semiconductors

Influence of defect levels in short wavelength Hg1-xCdxTe photodiodes on the performance of device

Backside-Illuminated Infrared Photoluminescence and Photoreflectance: Probe of Vertical Nonuniformity of Hgcdte on Gaas

Study of Photoreflectance Spectroscopy in Semiconductor Cd1-xMnxTe/CdTe Superlattices with High Compositions

Application of infrared transmission spectra in the assessment of HgCdTe epilayers

? First-Principles Study on the Electronic Structures and Optical Properties of Hg 1- X Cd X Te

Control of the Electrical Properties of In-doped HgCdTe Grown by MOVPE for IR Detector Applications

Growth and Characterization of Liquid-Phase Epitaxial Hg1-Xcdxte Films

Study Of Interdiffusion In Hgcdte/Cdznte Structures By Infrared Transmission Spectroscopy

Hg1-xCdxTe Liquid Phase Epilayer by X-Ray Diffraction Method