Abstract:First-principles calculations based on Density functional theory (DFT) and Heyd, Scuseria and Ernzerhof (HSE) adopt PBE approximation-a new version of the generalized gradient approximation (GGA). It has studied lattice parameter, electronic structure, optical properties and mechanical properties of materials, including diamond-C and zinc-blende structure of Si, Ge, 3C-SiC. The result of HSE calculation is obviously superior to DFT calculation and accord well with the existing experimental values. It indicates that they are indirect bandgap materials from the figure of band structure and density of states. The bandgap which it calculated using HSE accords well with the existing experimental values except Ge. In the calculation of optical property, it shows that they correspond with the existing experimental values from the imaginary part of analytical dielectric function to the refractive index and adsorption coefficient. It demonstrates that they exists the corresponding relationship among the peak of the imaginary part of analytical dielectric function, the refractive index and adsorption coefficient. The optical property has a direct relationship with the distribution of crystal bandgap and electronic state density. From the results of mechanical properties it can know that they are brittle materials. Though the hardness and stiffness of 3C-SiC is lower than diamond, it is superior to the materials of Si, Ge as excellent semiconductor materials. In addition, the mechanical anisotropy of four materials is inconspicuous; the anisotropy of Diamond-C is very inconspicuous from anisotropic properties of Young modulus.

First-Principles Calculations of Structural, Electronic, and Thermodynamic Properties of Monolayer Si1-Xgexc Sheet

Structural, Electronic, and Optical Properties of Ordered Si1−Ge C Alloys: A First Principles Study

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

First-Principles Study of Monolayer and Bilayer Honeycomb Structures of Group-Iv Elements and Their Binary Compounds

Mechanical and electronic properties of SiGe alloy in Cmmm structure

The Structural, Elastic And Thermodynamic Properties Of Intermetallic Phases In Mg-Sn-Si-Ca(Sr) Alloys: A First-Principles Study

Phase stability of monolayer Si1- xGex alloys with a Dirac cone

The Electronic Structure and Elastic Properties of Nbsisb and Nbgesb: A First-Principles Study

Direct correlation between electronic and optical properties of the XC monolayers (X= Si, Ge, and Sn) from first-principles calculations

First-principles study of (Ti5−xMgx)Si3 phases with the hexagonal D88 structure: Elastic properties and electronic structure

Optical properties and Mechanical properties of C, Si, Ge and 3C-SiC Materials Calculated from First Principles Theory

Lattice Mismatch, Mechanical Properties and Lattice-Compensation Effect in Si1-xGex Alloys by Using First-Principles Calculations Combined with Virtual Crystal Approximation

Structural and Electronic Evolution from Sic Sheet to Silicene

First-principles study of (Ti 5-xMg x)Si 3 phases with the hexagonal D8 8 structure: Elastic properties and electronic structure

First principles study of the lattice stabilities of elemental Si

First‐Principles Study on the 1T Phase of GaX (X=S, Se) Monolayers

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Novel bonding patterns and optoelectronic properties of the two-dimensional Si$_x$C$_y$ monolayers

First-principles Studies of Lattice Dynamics and Thermal Properties of Mg2Si1−xSnx