Abstract:Using the density functional theory calculations, we systematically investigate the structures and properties of silicene-like SiX and XSi3 (X = B, C, N, Al, P) hexagonal heterosheets. For the SIX systems, the SiP sheet favors a chairlike buckled structure akin to silicene, the SiB, SiN, and SiAl ones prefer the washboard-like buckling type, and the SiC sheet adopts the flat plane as graphene. The planarity is also favored in the XSi3 sheets with X = B, C, Al, while the rests with X = N and P prefer the chairlike buckled structures. The energetic stabilities and mechanical properties are also investigated for these SiX and XSi3 systems, and all the heterosheets are found to be stable. Unlike the semimetallic silicene, most of the SiX sheets are transformed to metals except for the SiC one with a wide band gap. For the XSi3 systems, they can be metals, semimetals, or narrow-band gap semiconductors depending on the X elements. The BSi3 and NSi3 sheets exhibit metallic behaviors, which behave like the p-type or n-type doping into silicene. On the other hand, the Al Si, and PSi3 ones turn to semiconductors with narrow indirect band gaps, which are dominated by the Si-Si and Si-X bonding/antibonding states. Of particular interests, we find the CSi3 sheet maintains the zero-band gap semimetallicity of silicene, for which the p, orbitals of Si and C atoms contribute to the linear Dirac-like bands near the Fermi level. The dynamical stabilities of the CSi3, AlSi3, and PSi3 sheets are further examined by phonon calculations and ab initio molecular dynamics simulations, which confirm the robust stability of their free-standing states. Our studies demonstrate that the Si-related heterosheets have peculiar structures and properties, which have potential applications in the nanoelectronics and devices.

First-Principles Study of Monolayer and Bilayer Honeycomb Structures of Group-Iv Elements and Their Binary Compounds

Monolayer honeycomb structures of group IV elements and III-V binary compounds

Monolayer Ii-Vi Semiconductors: A First-Principles Prediction

First-Principles Calculations of Structural, Electronic, and Thermodynamic Properties of Monolayer Si1-Xgexc Sheet

Two-Dimensional Honeycomb Monolayer of Nitrogen Group Elements and the Related Nano-Structure: A First-Principle Study

First-principles Study of Structural, Vibrational, and Electronic Properties of Trigonally Bonded II-IV-N2

Structural and Electronic Properties of Monolayer Hydrogenated Honeycomb III–V Sheets from First-Principles

Strain Induced Topological Phase Transitions in Monolayer Honeycomb Structures of Group-V Binary Compounds

A First-Principles Study of Defects and Adatoms in Silicon Carbide Honeycomb Structures

The Electronic Structure and Elastic Properties of Nbsisb and Nbgesb: A First-Principles Study

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

First-principles Calculations of a Robust Two-Dimensional Boron Honeycomb Sandwiching a Triangular Molybdenum Layer

The stability and the nonlinear elasticity of 2D hexagonal structures of Si and Ge from first-principles calculations

Metastable C-centered Orthorhombic Si8and Ge8

Electric Field Effect of Gaas Monolayer from First Principles

Structural, Vibrational and Electronic Properties of Single Layer Hexagonal Crystals of Groups IV and V

Density Functional Theory Study Of The Silicene-Like Six And Xsi3 (X = B, C, N, Al, P) Honeycomb Lattices: The Various Buckled Structures And Versatile Electronic Properties

Theoretical Study of Two-Dimensional Boron Silicide from First-Principles

A New Structure of Two-Dimensional Allotropes of Group V Elements

Interaction Between Post-Graphene Group-Iv Honeycomb Monolayers And Metal Substrates: Implication For Synthesis And Structure Control

Tuning the Indirect–direct Band Gap Transition of SiC, GeC and SnC Monolayer in a Graphene-Like Honeycomb Structure by Strain Engineering: a Quasiparticle GW Study