Abstract:III–V semiconductors such as GaAs are widely studied as promising candidates for high-speed integrated circuit. Despite these applications for conventional bulk structures, their fundamental physical properties in the nanoscale limit are still in scarcity, which is of great importance for the development of nanoelectronics. In this work, we demonstrate that the III–V semiconductor MX (M = Al, Ga, In; X = P, As, Sb) in its two-dimensional (2D) limit could exhibit double layer honeycomb (DLHC) configuration and distorted tetrahedral coordination, according to our first-principles calculations with HSE06 hybrid functional. It is found that surface reconstruction endows 2D III–V DLHCs with pronouncedly different electronic and magnetic properties from their bulk counterparts due to strong interlayer coupling. Mexican-hat-shape bands emerge at the top valence bands of pristine AlP, GaP, InP, AlAs, and InAs DLHCs, inducing the density of states showing a sharp van Hove singularity near the Fermi level. As a result, these DLHCs exhibit itinerant magnetism upon moderate hole doping, while the rest GaAs, AlSb, GaSb, and InSb DLHCs become magnetic under tensile strain with hole doping. With an exchange splitting of the localized pz states at the top valence bands, the hole-doped III–V DLHCs become half-metals with 100% spin-polarization. Remarkably, the InSb DLHC shows inverted band structure near the Fermi level, bringing about nontrivial topological band structures in stacked InSb DLHC due to the strong spin-orbital coupling. These III–V DLHCs expand the members of 2D material family and their exotic magnetic and topological properties may offer great potential for applications in the novel electronic and spintronic devices.

Strain Induced Topological Phase Transitions in Monolayer Honeycomb Structures of Group-V Binary Compounds

Topological insulators vs. topological Dirac semimetals in honeycomb compounds

Manipulating Topological Phase Transition by Strain.

Monolayer honeycomb structures of group IV elements and III-V binary compounds

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Strain-induced topological phase transition in two-dimensional platinum ditelluride

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Topological Phases and Phase Transitions on the Honeycomb Lattice

Topological states in honeycomb arrays of implanted acceptors in semiconductors

Strain Tunable Semimetal–Topological-Insulator Transition in Monolayer 1 T ′ − WTe 2

Artificial Gravity Field, Astrophysical Analogues, and Topological Phase Transitions in Strained Topological Semimetals

Strain-tunable electronic anisotropy of AlSb double-layer honeycomb structure

First-Principles Study of Monolayer and Bilayer Honeycomb Structures of Group-Iv Elements and Their Binary Compounds

Carrier-driven magnetic and topological phase transitions in two-dimensional III–V semiconductors

Engineering topological states in two-dimensional honeycomb lattice

Topological Insulating States in 2D Transition Metal Dichalcogenides Induced by Defects and Strain.

Strain Tunable Phononic Topological Bandgaps in Two-Dimensional Hexagonal Boron Nitride

Two-dimensional Honeycomb Borophene Oxide: Strong Anisotropy and Nodal Loop Transformation.

Abundant topological phases in hydrogenated group-IV binary alloy compounds

Strain-tunable band gap of a monolayer graphene analogue of ZnS monolayer

Comparative Study on Dynamical Stability Against Strain of Pristine and Chemically Functionalized Monolayer Honeycomb Materials