Abstract:III–V semiconductors such as GaAs are widely studied as promising candidates for high-speed integrated circuit. Despite these applications for conventional bulk structures, their fundamental physical properties in the nanoscale limit are still in scarcity, which is of great importance for the development of nanoelectronics. In this work, we demonstrate that the III–V semiconductor MX (M = Al, Ga, In; X = P, As, Sb) in its two-dimensional (2D) limit could exhibit double layer honeycomb (DLHC) configuration and distorted tetrahedral coordination, according to our first-principles calculations with HSE06 hybrid functional. It is found that surface reconstruction endows 2D III–V DLHCs with pronouncedly different electronic and magnetic properties from their bulk counterparts due to strong interlayer coupling. Mexican-hat-shape bands emerge at the top valence bands of pristine AlP, GaP, InP, AlAs, and InAs DLHCs, inducing the density of states showing a sharp van Hove singularity near the Fermi level. As a result, these DLHCs exhibit itinerant magnetism upon moderate hole doping, while the rest GaAs, AlSb, GaSb, and InSb DLHCs become magnetic under tensile strain with hole doping. With an exchange splitting of the localized pz states at the top valence bands, the hole-doped III–V DLHCs become half-metals with 100% spin-polarization. Remarkably, the InSb DLHC shows inverted band structure near the Fermi level, bringing about nontrivial topological band structures in stacked InSb DLHC due to the strong spin-orbital coupling. These III–V DLHCs expand the members of 2D material family and their exotic magnetic and topological properties may offer great potential for applications in the novel electronic and spintronic devices.

Topological states in honeycomb arrays of implanted acceptors in semiconductors

Engineering topological states in two-dimensional honeycomb lattice

Topological insulators vs. topological Dirac semimetals in honeycomb compounds

Topological states in multi-orbital HgTe honeycomb lattices

Strain Induced Topological Phase Transitions in Monolayer Honeycomb Structures of Group-V Binary Compounds

Interaction-driven Topological Switch in a P -Band Honeycomb Lattice

Large gap two dimensional topological insulators: bilayer triangular lattice TlM (M = N, P, As, Sb)

Edge states in super honeycomb structures with PT_]-symmetric deformations

A Honeycomb Lattice Model Simulating the Surface States of Topological Insulators

Topological Insulators in Ternary Compounds with a Honeycomb Lattice

Topological Phases and Phase Transitions on the Honeycomb Lattice

Topological Bands in Two-Dimensional Orbital-Active Bipartite Lattices

New Topological States in HgTe Quantum Wells from Defect Patterning

Carrier-driven magnetic and topological phase transitions in two-dimensional III–V semiconductors

Buckled honeycomb group-$V$--$S_6$ symmetric $(d-2)$ higher order topological insulators

Takagi Topological Insulator on the Honeycomb Lattice

Spin-valley polarized edge states and quantum anomalous Hall states controlled by side potential in two-dimensional honeycomb lattices

Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices

From atomic semimetal to topological nontrivial insulator

Robustness of Topological Insulating Phase Against Vacancy, Vacancy Cluster, and Grain Boundary Bulk Defects

Topologically Trivial States Induced By Strong Spin-Orbit Coupling And Chern Insulators In Doped X(C21n3h15) (X = Ta, Hf) Metal-Organic Frameworks