Abstract:A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the understanding and control of complex ground state order and collective excitations. Owing to its spin, valley and orbital degrees of freedom, Bernal-stacked bilayer graphene offers a rich platform to pursue correlated phenomena in two dimensions. In this work, we fabricate dual-gated Bernal-stacked bilayer graphene devices and demonstrate unprecedented fine control over its valley isospin degrees of freedom using a perpendicular electric field. Higher sample quality enables us to probe regimes obscured by disorder in previous studies. We present evidence for a new even-denominator fractional quantum Hall state at filling factor {\nu} = 5/2. The 5/2 state is found to be spontaneously valley polarized in the limit of vanishing valley Zeeman splitting, consistent with a theoretical prediction made regarding the spin polarization of the Moore-Read state. In the vicinity of the even-denominator fractional quantum Hall states, we observe the appearance of the predicted Levin-Halperin daughter states of the Moore-Read Pfaffian wave function at {\nu}= 3/2, 7/2, and -1/2 and of the anti-Pfaffian at {\nu}= 5/2. These observations suggest the breaking of particle-hole symmetry in bilayer graphene. We construct a comprehensive valley polarization phase diagram for the Jain sequence fractional states surrounding filling factor 3/2. These results are well explained by a two-component composite fermion model, further demonstrating the SU(2) nature of the valley isospin in bilayer graphene. Our experiment paves the path for future efforts of manipulating the valley isospin in bilayer graphene to engineer exotic topological orders and quantum information processes.

Spin-valley polarized edge states and quantum anomalous Hall states controlled by side potential in two-dimensional honeycomb lattices

Valley-dependent odd quantum Hall states induced by side potential in graphene

Unification of Valley and Anomalous Hall Effects in a Strained Lattice

Valley-Polarized Quantum Anomalous-Hall Effects in Silicene

Concepts of super-valley electron and twist induced quantum super-valley Hall effect

Valley Isospin Controlled Fractional Quantum Hall States in Bilayer Graphene

Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry

Valley-Polarized Quantum Anomalous Hall Effect in Ferrimagnetic Honeycomb Lattices

Engineering topological states in two-dimensional honeycomb lattice

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Spin Polarized and Valley Helical Edge Modes in Graphene Nanoribbons

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Valley Hall edge solitons in honeycomb lattice with an armchair-type domain wall

Spin-Polarized Nematic Order, Quantum Valley Hall States, and Field-Tunable Topological Transitions in Twisted Multilayer Graphene Systems

Direct measurement of discrete valley and orbital quantum numbers in a multicomponent quantum Hall system

Electric-field-tunable topological phases in valley-polarized quantum anomalous Hall systems with inequivalent exchange fields

Gate-tunable localization and delocalization of perfect valley-related topological edge states in zigzag graphene nanoribbons

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

Valley-spin polarized Landau levels in a monolayer semiconductor

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit