Abstract:Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to form As8 clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the deposition and growth of GaAs crystal films were performed. Additionally, the deposition and growth of GaAs thin films were simulated using molecular dynamics. The influence of As8 clusters on the surface morphology and internal structure of GaAs films at different incidence angles, velocities and substrate temperatures was studied by using "defect analysis technology" and "diamond structure identification" in open source software, along with surface roughness and radial distribution function. Results show that with increasing incident angle, the number of As8 clusters decreases and film density increases. Increasing incident velocity increases the irregular movement of As8 clusters in air, and their deposition on the film surface affects the morphology of the film, the surface roughness increases first and then decreases. Additionally, we investigated the effect of different substrate temperatures on the film surface. Results show that at a substrate temperature of 1173 K, the number of As8 clusters in the film decreases or the As8 clusters disappear, heterogeneous nucleation occurs in the film, and the crystallization rate increases. Although the dislocation line associated with nucleation may affect the mechanical and optical properties of the film, it considerably reduces the annealing effort after the deposition and growth.

TEMPERATURE EFFECTS ON THE INTERACTION BETWEEN P AND GaAs(lOO) SURFACE

Insitu Electron-Spectroscopy Studies Of Interaction Between P And Gaas(100) Surface

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

PHOTOELECTRON SPECTROSCOPY STUDIES OF Α-P/gaas (100) INTERFACES

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Thermal Annealing Effect on Low-Temperature Molecular-Beam Epitaxy-Grown Gaas - Arsenic Precipitation and the Change of Resistivity

Study on development of Cr/GaAs(100) interface with SRPES

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates

Effects of Annealing and Substrate Orientation on Epitaxial Growth of GaAs on Si

Oxidation Effects on InAs/GaSb (100) Films Deposited by DC Magnetron Sputtering During Post-Annealing

The Effect Of Annealing Temperature On The Characterization Of Al/Pbte Films

Influence of annealing on the surface structure evolution of intrinsic p-type HgCdTe films.

Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate

Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate

Influence Of Annealing Temperature On Structural, Morphology, Optical And Photocatalytic Properties Of Beta-Ga2o3 Thin Films

Effects ofAs8structure formation on the surface morphology and internal microstructure of GaAs thin films

Effects of Postannealing Temperature on the Band Alignments and Interfacial Properties of Atomic Layer Deposited Al2o3 on Ge Substrates

Effects of As8 structure formation on the surface morphology and internal microstructure of GaAs thin films

Influence of Annealing Temperature on Structural, Morphology, Optical and Photocatalytic Properties of β-Ga2O3 Thin Films