Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams
O. Romanyuk,A. Paszuk,I. Gordeev,R.G. Wilks,S. Ueda,C. Hartmann,R. Félix,M. Bär,C. Schlueter,A. Gloskovskii,I. Bartoš,M. Nandy,J. Houdková,P. Jiříček,W. Jaegermann,J.P. Hofmann,T. Hannappel
DOI: https://doi.org/10.1016/j.apsusc.2022.154630
2022-06-17
Abstract:The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with arsenic is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, 4-50 nm thick GaP epitaxial films were grown on As-terminated Si(100) substrates with different types of doping, miscuts, and As-surface termination by metalorganic vapor phase epitaxy. The GaP(As)/Si(100) heterostructures were investigated by X-ray photoelectron spectroscopy (XPS) combined with gas cluster ion beam (GCIB) sputtering and by hard X-ray photoelectron spectroscopy (HAXPES). We found residuals of arsenic atoms in the GaP lattice (0.2-0.3 at.%) and a localization of As atoms at the GaP(As)/Si(100) interface (1 at.%). Deconvolution of core level peaks revealed interface core level shifts. In As core levels, chemical shifts between 0.5-0.8 eV were measured and identified by angle-resolved XPS measurements. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the doping type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the heterostructure was deduced.
Materials Science