Prediction of Electromagnetic Interference Noise in SiC MOSFET Module

Chuang Bi,Ruobing Lu,Hui Li

DOI: https://doi.org/10.1109/tcsii.2019.2908971

2019-01-01

Abstract:Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) are new generation of power semiconductor devices with higher slew rates. During switching transient process, undesirable switching oscillations occurs in SiC MOSFET modules due to the parasitic elements, such as stray inductances and parasitic capacitances. Based on equivalent circuit models, this brief derives the spectrum of the switching waveform with ringing, and investigates the spectral bounds and the influence of ringing on the spectral content. Through LTSPICE simulation, the spectrum comparison between numerical calculation and the circuit simulation reveals that parasitic elements of SiC MOSFET have significant effect on the high-frequency spectral content. In addition, the experiments are carried out to verify the theoretical analysis.