Abstract:The current evaluation on negative capacitance ferroelectric MOSFET (NC-FeFET) mostly reports device-level current/capacitance-voltage prediction and approaches with ease of integration in SPICE for circuit level performance prediction are very limited. For benchmarking against intrinsic MOSFET and beyond-CMOS devices, a new Landau-Khalatnikov theory-based SPICE model of ferroelectric is presented as a series connectionof a voltage controlled voltage source and a resistor. It predicts both static and dynamic behaviors by including ferroelectric damping constant. Integration of this ferroelectric model with BSIM4 model of 45-nm CMOS technology allows prediction of circuit-level performance of NC-FeEFT. In currentvoltage characteristics, both subthreshold swing and off-state current are reduced compared with intrinsic MOSFET. For an inverter chain, different values of damping constants give rise to a wide range of propagation delays and power consumptions. Only NC-FeFET using sufficiently low damping constant ferroelectric with similar response time to intrinsic MOSFET can be considered as a low-power device with a similar propagation delay. In this case, its dynamic power is suppressed by the same proportion as that of internal voltage amplification and static leakage power also drops. Our results reveal the ferroelectricswitching time and Landau parameter requirements for FeFET use in low-power circuit applications.

Impact of Junction Capacitor and Transfer Characteristic on EMI Prediction

Delay and Power Evaluation of Negative Capacitance Ferroelectric Mosfet Based on Spice Model

Electrical Modeling of Multi-Walled Carbon Nanotube (Mwcnt)-Based Capacitors for High-Density RF Integration

An Efficient Nonlinear Capacitance Model for SOIFET Used As A Switch

A Neuro-Space Mapping Method for Harmonic Interference Prediction of SOIFET Radio Frequency Switches

Characteristics of SiC inverter powertrains on common-mode EMI noise

Optimization of Frequency Jittering Parameters for Conducted EMI Suppression in Switching Mode Power Supplies

An Efficient Equivalent Circuit Model for the EMC Analysis of Power/Ground Noise

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Efficient Nonlinear Behavior Modeling Method for Voltage-Variable Capacitors

An Efficient Neural Network Macro-model for Electromagnetic Radiation Spurious Emission from Voltage-Variable Capacitors

Modeling and Prediction of Low-frequency Radiated EMI for a SiC Motor Drive System

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Modeling and prediction of conducted EMI in on-board charging system of electric vehicle

Investigation of the Effects of Snubber Capacitors on Turn-on Overvoltage of SiC MOSFETs

Influence of System Layout on CM EMI Noise of SiC Electric Vehicle Powertrains

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

Modeling of the Simultaneous Switching Noise in High Speed Electronic Circuit with the Integral Equation Method and Vector Fitting Method

Calculation and Analysis for Spectrum Characteristics Parameters of Switching Device for Reduced EMI Generation

Development of Simulation Prediction Techniques for Low Frequency Emissions

Three-dimensional Fully-coupled Electromagnetic Field Modeling and Characterization of SiC MOSFET Switching Transients