High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality
Ya-Ting Shi,Wei-Zong Xu,Chang-Kun Zeng,Fang-Fang Ren,Jian-Dong Ye,Dong Zhou,Dun-Jun Chen,Rong Zhang,Youdou Zheng,Hai Lu
DOI: https://doi.org/10.1109/jeds.2019.2956844
2020-01-01
IEEE Journal of the Electron Devices Society
Abstract:High-k HfO2 has been widely adopted in Si based MOSFETs as gate dielectric for the superior control over gate leakage and channel electrostatics. However, in AlGaN/GaN HEMTs, the additional interface issue as well as high oxygen transparency of HfO2 has hindered its practical applications. In this work, high-k Y2O3 with ultra-low oxygen permeability and high thermodynamic robustness has been introduced as the interfacial layer between HfO2/GaN for the interface engineering. It has been demonstrated that, the HfO2/Y2O3 gate dielectric stacks have obtained the GaN MIS-HEMT an ultra-small subthreshold swing of ~70 mV/decade, an extremely low gate leakage of ~10-12 A/mm, and a desirable dielectric/semiconductor interface quality with interface state density in level of ~1012 cm-2eV-1. Meanwhile, a maximum drain current of 600mA/mm has been achieved together with an on-state resistance (Ron) of 10.7 Ω·mm and a specific Ron of 2.62 mΩ·cm2.