Abstract:Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a challenge. Non-volatile magnetoresistive random access memories (MRAMs) driven by spin-orbit torques (SOTs) have promise to be faster and more energy-efficient than conventional semiconductor and spin-transfer-torque magnetic memories. This work reports that the spin Hall effect of low-resistivity Au0.25Pt0.75 thin films enables ultrafast antidamping-torque switching of SOT-MRAM devices for current pulse widths as short as 200 ps. If combined with industrial-quality lithography and already-demonstrated interfacial engineering, our results show that an optimized MRAM cell based on Au0.25Pt0.75 can have energy-efficient, ultrafast, and reliable switching, e.g. a write energy of < 1 fJ (< 50 fJ) for write error rate of 50% (<1e-5) for 1 ns pulses. The antidamping torque switching of the Au0.25Pt0.75 devices is 10 times faster than expected from a rigid macrospin model, most likely because of the fast micromagnetics due to the enhanced non-uniformity within the free layer. These results demonstrate the feasibility of Au0.25Pt0.75-based SOT-MRAMs as a candidate for ultrafast, reliable, energy-efficient, low-impedance, and unlimited-endurance memory.

Proposal of Toggle Spin Torques Magnetic RAM for Ultrafast Computing

Evaluation Of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin-Orbit Torque

Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)

Variability Study of Toggle Spin Torques Magnetic Random Access Memory

A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM.

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Design of an Erasable Spintronics Memory Based on Current-Path-dependent Field-Free Spin Orbit Torque

A Novel In-memory Computing Scheme Based on Toggle Spin Torque MRAM.

Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories.

Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75

Spin Orbit Torques for Ultra-Low Power Computing.

Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory

RAM and TCAM Designs by Using STT-MRAM

Towards Spintronics Nonvolatile Caches

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

Energy-Efficient Ultrafast SOT-MRAMs Based on Low-Resistivity Spin Hall Metal Au<sub>0.25</sub>Pt<sub>0.75</sub>

Ultrafast Spintronic Integrated Circuits

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

In-Memory Computing Paradigms by Exploiting the Intrinsic Interactions Between STT and SOT

Spintronics for Energy- Efficient Computing: An Overview and Outlook

Thermal Stable and Fast Perpendicular Shape Anisotropy Magnetic Tunnel Junction