Abstract:We report on the structural and superconducting electronic properties of the heavy-electron superconductor TlNi2Se2. By using a variable-temperature scanning tunneling microscopy (VT-STM) the coexistence of (root 2 x root 2)R45 degrees and (2 x 1) surface reconstructions is observed. Similar to earlier observations on the "122" family of Fe-based superconductors, we find that their respective surface fraction strongly depends on the temperature during cleavage, the measurement temperature, and the sample's history. Cleaving at low temperature predominantly results in the (root 2 x root 2)R45 degrees-reconstructed surface. A detailed analysis of the (root 2 x root 2)R45 degrees-reconstructed domains identifies (2 x 1)-ordered dimers, tertramers, and higher order even multimers as domain walls. Higher cleaving temperatures and the warming of low-temperature-cleaved samples increases the relative weight of the (2 x 1) surface reconstruction. By slowly increasing the sample temperature T-s inside the VT-STM we find that the (root 2 x root 2)R45 degrees surface reconstructions transforms into the (2 x 1) structure at T-s = 123 K. We identify the polar nature of the TlNi2Se2(001) surface as the most probable driving mechanism of the two reconstructions, as both lead to a charge density rho = 0.5 e(-), thereby avoiding divergent electrostatic potentials and the resulting "polar catastrophe." Low-temperature scanning tunneling spectroscopy (STS) performed with normal metal and superconducting probe tips shows a superconducting gap which is best fit with an isotropic s wave. We could not detect any correlation between the local surface reconstruction, suggesting that the superconductivity is predominantly governed by TlNi2Se2 bulk properties. Correspondingly, temperature-and field-dependent data reveal that both the critical temperature and critical magnetic field are in good agreement with bulk values obtained earlier from transport measurements. In the superconducting state the formation of an Abrikosov lattice is observed without any zero bias anomaly at the vortex core.

From An Atomic Layer To The Bulk: Low-Temperature Atomistic Structure And Ferroelectric And Electronic Properties Of Snte Films

Ab Initio Study of Ferroelectric Critical Size of SnTe Low-Dimensional Nanostructures.

Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure.

Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature

Intrinsic Origin of Enhancement of Ferroelectricity in SnTe Ultrathin Films

Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films

Scanning Tunneling Microscopy and Spectroscopy Studies of the Heavy-Electron Superconductor TlNi2Se2

Topological crystalline insulator Pb {sub x} Sn {sub 1-x} Te thin films on SrTiO {sub 3}(001) with tunable Fermi levels

Terahertz lattice and charge dynamics in ferroelectric semiconductor Sn$_x$Pb$_{1-x}$Te

Native Atomic Defects Manipulation for Enhancing the Electronic Transport Properties of Epitaxial SnTe Films

Breaking crystalline symmetry of epitaxial SnTe films by strain

Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials Through Sn Self-Compensation and Mn Alloying.

Ab-initio insights into the elastic, bonding, phonon, optoelectronic and thermophysical properties of SnTaS2

Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

Compromise of Thermoelectric and Mechanical Properties in LiSbTe2 and LiBiTe2 Alloyed SnTe

Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe

Excited-state dynamics of structurally characterized crystal of SnxSb1-x

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb<sub>2</sub>Te<sub>4</sub>

Chemistry, Growth Kinetics, and Epitaxial Stabilization of Sn2+ in Sn-Doped Srtio3 Using (Ch3)(6)sn-2 Tin Precursor

Thermoelectric and lattice dynamics properties of layered MX (M = Sn, Pb; X = S, Te) compounds