Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Kai Chang,Junwei Liu,Haicheng Lin,Na Wang,Kun Zhao,Anmin Zhang,Feng Jin,Yong Zhong,Xiaopeng Hu,Wenhui Duan,Qingming Zhang,Liang Fu,Qi-Kun Xue,Xi Chen,Shuai-Hua Ji
DOI: https://doi.org/10.1126/science.aad8609
IF: 56.9
2016-07-15
Science
Abstract:Thinning a ferroelectric makes it better As a ferroelectric material becomes thinner, the temperature below which it develops its permanent electrical polarization usually decreases. Chang et al. fabricated high-quality thin films of SnTe that, in contrast to this conventional wisdom, had a considerably higher transition temperature than that of the material in bulk (see the Perspective by Kooi and Noheda). This was true even for single-unit cell films, whereas only slightly thicker films became ferroelectric above room temperature. This finding may enable the miniaturization of ferroelectric devices. Science , this issue p. 274 ; see also p. 221
multidisciplinary sciences
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