Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Defect Activated Photoluminescence in WSe2 Monolayer

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Defects As a Factor Limiting Carrier Mobility in WSe 2 : A Spectroscopic Investigation

Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering

Revealing the Competition between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS 2

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation

Robust and High Photoluminescence in WS 2 Monolayer through In Situ Defect Engineering

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Identifying Defect-Related Quantum Emitters in Monolayer WSe2

Defects inducing anomalous exciton kinetics in monolayer WS2

Defect creation in WSe2 with a microsecond photoluminescence lifetime by focused ion beam irradiation

Defect Structure of Localized Excitons in A Wse2 Monolayer

Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

Giant Photoluminescence Enhancement of Monolayer WSe2 Using a Plasmonic Nanocavity with On-Demand Resonance

How defects influence the photoluminescence of TMDCs

Defect‐Mediated Efficient and Tunable Emission in van der Waals Integrated Light Sources at Room Temperature

Role of Defects in Tuning the Electronic Properties of Monolayer WS2 Grown by Chemical Vapor Deposition

The Role of Chalcogen Vacancies in Single Photon Emission from Monolayer Tungsten Dichalcogenides

Defect-induced anomalous thermal quenching of photoluminescence in the transition metal dichalcogenide ternary alloy

Defect-Engineering-Enhanced Electrical Manipulation of Anisotropic Excitons in Two-Dimensional ReS2

Defect-Enhanced Exciton–Exciton Annihilation in Monolayer Transition Metal Dichalcogenides at High Exciton Densities