Abstract:The development of silicon-based high-power devices, e.g. IGBTs, has reached its application limits in terms of high-temperature and high-frequency harsh operating conditions. Wide bandgap (WBG) power devices (such as silicon carbide, SiC) are currently one of the most promising power devices for replacement. Due to their intrinsic bandgap, SiC high-power devices have proven their superior performance in high-frequency and high-temperature working scenarios. With the increasing demand of high-power semiconductor devices in industries such as new-energy vehicles, high-speed railway systems, and aerospace, the conditions of SiC power semiconductor devices have become more and more complex, which brings challenges to electronic packaging technology. Due to thermal management and reliability requirements for SiC power devices, customized advanced heat dissipation structures, and high-temperature soldering materials have been introduced in power device packaging technology. The reliability verification of these new electronic packaging technologies is often time-consuming and labor-intensive, so designers hope to obtain results consistent with actual experimental data through the utilization of computer-aided design methods, such as finite-element analysis (FEA), which will greatly reduce the number of iterations of physical prototypes and the development time. This article reviewed and discussed the application of FEA in the latest packaging technology, including the extraction of the thermal resistance network of the SiC power module, the thermal simulation of the novel efficient cooling structure, the thermo-mechanical analysis of the high-temperature packaging material, and the long-term reliability FEA of the SiC power devices.

An Initial Consideration of Silicon Carbide Devices in Pressure-Packages

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Enhanced Field-Dependent Conductivity and Material Properties of Nano-Aln/micro-sic/silicone Elastomer Hybrid Composites for Electric Stress Mitigation in High-Voltage Power Modules

Design and evaluation of press-pack SiC MOSFET

A Solution to Press-Pack Packaging of SiC MOSFETS

Commercialization of Highly Rugged 4H-Sic 3300 V Schottky Diodes and Power MOSFETs

10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field

A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package

SiC based Technology for High Power Electronics and Packaging Applications

Compact Sandwiched Press-Pack SiC Power Module With Low Stray Inductance and Balanced Thermal Stress

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

A Wire-Bondless Packaging Platform for Silicon Carbide Power Semiconductor Devices

Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip

Overview of Finite-Element Analysis in Simulation of SiC Power Device Packaging

Performance and Application of SiCp/Al Composites for Electronic Packaging

The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents