Abstract:In-memory computing (IMC) paradigm has attracted extensive attention for future electronics to overcome the bottleneck and memory wall problem in the von Neumann systems. Nonvolatile logic based on resistive random-access memory (RRAM) is a promising route to implement such architecture. This paper presents the circuits and computing methodology to implement functionally complete Boolean logic and arithmetic block co-design using the CMOS-compatible 2-transistor-2-RRAM (2T2R) structure with reversely connected bipolar RRAM pairs. Arbitrary logic functions for two and multiple operands could be implemented in one-step operation, after which the computation results are in situ stored as the nonvolatile resistive states of the RRAM. In this design, the logic functionality is achieved by simply applying external operational voltages and/or corresponding RRAM initial states to the proposed 2T2R units. Compared with the traditional CMOS designs where the circuit topologies change with logic functions, the proposed 2T2R chain has a universal design with repeated unit blocks, independent of the logic functions. The highly regular and symmetric circuit structure makes it easy for design, integration, and fabrication. The proposed computing scheme/structure is intrinsic, clean, and efficient for IMC applications and presents superior performance in speed and area. The result of the study could build a technology cell library that can be potentially used as input to a technology-mapping algorithm for processing in-memory applications.

Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array

Efficient Implementation of Boolean and Full-Adder Functions with 1T1R RRAMs for Beyond Von Neumann In-Memory Computing

Functionally Complete Boolean Logic and Adder Design Based on 2T2R RRAMs for Post-CMOS In-Memory Computing

Implementation Of Functionally Complete Boolean Logic And 8-Bit Adder In Cmos Compatible 1t1r Rrams For In-Memory Computing

Nonvolatile reconfigurable sequential logic in a HfO 2 resistive random access memory array.

Boolean and Sequential Logic in a One‐Memristor‐One‐Resistor (1M1R) Structure for In‐Memory Computing

Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

Reconfigurable Nonvolatile Boolean Logic with One-Transistor-two-memristor for In-Memory Computing

Logic Circuit and Memory Design for In-Memory Computing Applications Using Bipolar RRAMs

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

A Novel Capacitor-based Stateful Logic Operation Scheme for In-memory Computing in 1T1R RRAM Array

Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar

Reconfigurable Stateful Logic Design in the One-Transistor-one-memristor Crossbar Array for Logic-in-memory Computing

A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)

16 Boolean Logics in Three Steps with Two Anti-Serially Connected Memristors

Nonvolatile Boolean logic in the one-transistor-one-memristor crossbar array for reconfigurable logic computing

Nonvolatile memristive logic: a road to in-memory computing

Reconfigurable Stateful Logic Circuit with Cu/CuI/Pt Memristors for In-Memory Computing

Efficient Implementation of Complete Reconfigurable Boolean Logic Primitives Based on Memristors

Resistive Random Access Memory and Its Applications in Storage and Nonvolatile Logic