Abstract:Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1−xBixSe4 (x = 0–0.04) samples were fabricated through melting and hot pressing process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2−xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWm−1 K−2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm−1 K−1 and thermal conductivity (κtot) of ~ 0.62 Wm−1 K−1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times higher than that of pristine Cu3SbSe4. This work shows that isovalent heavy element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.

Enhanced Thermoelectric Properties Of The Dirac Semimetal Cd3as2

Enhanced thermoelectric properties of the Dirac semimetal Cd<sub>3</sub>As<sub>2</sub>

Enhancement of the Thermoelectric Figure of Merit in the Dirac Semimetal Cd$_{3}$As$_{2}$ by Band-Structure and -Filling Control

Magnetic Field-Enhanced Thermoelectric Performance in Dirac Semimetal Cd3As2 Crystals with Different Carrier Concentrations

Magnetic-field Enhanced High-Thermoelectric Performance in Topological Dirac Semimetal Cd_3As_2 Crystal

Unexpected Low Thermal Conductivity and Large Power Factor in Dirac Semimetal Cd 3 As 2

The Electronic and Magnetic Properties of Transition-Metal Element Doped Three-Dimensional Topological Dirac Semimetal in Cd3as2

Temperature-dependent Terahertz Properties of Carriers and Phonons in the Topological Dirac Semimetal Cd3As2

Ultrafast photothermoelectric effect in Dirac semimetallic Cd3As2 revealed by terahertz emission

Extraordinary Thermoelectric Properties of Topological Surface States in Quantum-Confined Cd3As2 Thin Films

Extraordinary Thermoelectric Properties of Topological Surface States in Quantum‐Confined Cd3As2 Thin Films

Thermoelectric Properties of Homogeneously and Non-Homogeneously Doped CdTe15/16M1/16 (M=N, P, As, Sb) and Cd15/16TeM1/16 (m=na, K, Rb, Cs)

Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe 2 via Cd-Doping

Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1.5Bi0.5

Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 Via Cd-Doping

Electronic Structures and Thermoelectric Properties of ZnSb Doped with Cd and in from First Principles Calculations

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

Thermoelectric properties and transport mechanism of Cu0.5In0.5Cr2Se4 and its Zn-doped samples

Enhanced Thermoelectric Performance of Cu 2 CdSnSe 4 by Mn Doping: Experimental and First Principles Studies

Enhancement of low-temperature thermoelectric performance via Pb doping in Cu3SbSe4

First-Principles Study of Doped CdX(X=Te,Se) Compounds: Enhancing Thermoelectric Properties