Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (vse2/mx2) and Their Band Alignments.

Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

A Gate Defined Quantum Dot on the Two-Dimensional Transition Metal Dichalcogenide Semiconductor WSe2

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers

Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-Wse_2 Monolayers

Temperature-Dependent Two-Dimensional Transition Metal Dichalcogenide Heterostructures: Controlled Synthesis and Their Properties

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

In‐plane Epitaxial Growth of 2D CoSe‐WSe2 Metal‐semiconductor Lateral Heterostructures with Improved WSe2 Transistors Performance

Interlayer Interactions In 2d Ws2/Mos2 Heterostructures Monolithically Grown By In Situ Physical Vapor Deposition

Lateral Epitaxial Growth of Two-Dimensional Layered Semiconductor Heterojunctions

Band Structure Engineering Through Van Der Waals Heterostructing Superlattices of Two‐dimensional Transition Metal Dichalcogenides

Controllable Synthesis of WSe2-WS2 Lateral Heterostructures via Atomic Substitution

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics