Abstract:Two-dimensional transition metal dichalcogenides (TMDs) possess the potential to be widely applied in optoelectronic devices, sensors, photocatalysis, and many other fields because of their intrinsic physical, chemical, and mechanical properties. Generally, the van der Waals (vdW) heterostructures fabricated from these TMDs exhibit excellent electronic properties. However, the spectral responses of most vdW heterostructures are limited by the inherent band gaps; it is thus essential to tune the band gaps for specific applications. In this paper, we performed a first-principles theoretical study on the structures and properties of WX2 (X = S, Se, Te), as well as the vdW heterostructures WS2/VVSe2, WS2/VVTe2, and WSe2/WTe2. The impacts of the number of layers on the properties of WX2 and the strain on the band gaps of vdW heterostructures were demonstrated. We found that every monolayer WX2 (X = S, Se, Te) is a direct gap semiconductor, and as the number of layers increases, their band gaps decrease and they become indirect bandgap semiconductors. The spin-orbit coupling (SOC) effect on their band structures is significant and can decrease the band gap by approximately 300 meV compared with those that do no incorporate SOC effects. The properties of WX2 can be accurately described by the HSE06 + SOC approach. WS2/VVSe2, WS2/VVTe2, and WSe2/VVTe2 heterostructures are direct gap semiconductors with band gaps of 1.10, 0.32, and 0.61 eV, respectively. These three heterostructures exhibit type-II band alignments, which facilitate photo-induced electron-hole separation. In addition, they have quite small electron and hole effective masses, indicating that the separated electrons and holes can move very quickly to reduce the recombination rate of electrons and holes. There is an explicit red-shift of the optical absorption spectra of the three heterostructures compared with those of the monolayer components, and the most obvious redshift occurs in WSe2/VVTe2 Both uniaxial and biaxial strains can alter the band gaps of these vdW heterostructures. Once the strain exceeds 4%, a transition from semiconductor to metal characteristics occurs. This work provides a way to tune the electronic properties and band gaps of vdW heterostructures for incorporation in high-performance optoelectronic devices.

Band Structure Engineering Through Van Der Waals Heterostructing Superlattices of Two‐dimensional Transition Metal Dichalcogenides

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Theoretical Study on Intrinsic Structures and Properties of Vdw Heterostructures of Transition Metal Dichalcogenides (WX2) and Effect of Strains

Temperature-Dependent Two-Dimensional Transition Metal Dichalcogenide Heterostructures: Controlled Synthesis and Their Properties

Electronic and Optical Properties of Van Der Waals Vertical Heterostructures Based on Two-Dimensional Transition Metal Dichalcogenides: First-principles Calculations

Systematic Study of Electronic Structure and Band Alignment of Monolayer Transition Metal Dichalcogenides in Van Der Waals Heterostructures

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

The role of Anderson's rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures.

Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

Tunable Band Structures of Heterostructured Bilayers with Transition-Metal Dichalcogenide and Mxene Mono Layer

Strong interlayer coupling and long-lived interlayer excitons in two-dimensional perovskite derivatives and transition metal dichalcogenides van der Waals heterostructures

Continuously Tunable Electronic Structure of Transition Metal Dichalcogenides Superlattices

Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (vse2/mx2) and Their Band Alignments.

Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors

What governs the atomic structure of the interface between 2D transition metal dichalcogenides in lateral heterostructures?

Unveiling the layer-dependent electronic properties in transition-metal dichalcogenide heterostructures assisted by machine learning

Electronic and Optical Properties of Heterostructures Based on Transition Metal Dichalcogenides and Graphene-Like Zinc Oxide.

Electronic Property Modulation in Two-Dimensional Lateral Superlattices of Monolayer Transition Metal Dichalcogenides.

Strain-Directed Layer-By-Layer Epitaxy Toward van der Waals Homo- and Heterostructures

Interlayer Interactions In 2d Ws2/Mos2 Heterostructures Monolithically Grown By In Situ Physical Vapor Deposition

Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer