Abstract:Tin sulphide (SnS) is a promising new material for use in photovoltaic solar cells. With a direct energy band gap of about 1.3 eV, and a high optical absorption coefficient, only a few microns of SnS are needed to absorb most of the incident light. Not only is SnS made of abundant, environmentally acceptable elements, it is also amphoteric giving flexibility to device design. Structures that can be envisioned include p-type SnS (absorber layer) / n-type (window layer) heterojunction devices, buried p-n junction devices made using SnS and p-i-n structure devices where the i-layer is SnS. It is most likely that the grain boundaries in SnS can be passivated either by counter-doping the grain boundaries, or by oxidizing the grain boundaries to form wide energy bandgap n-type SnO2 within p-type SnS, as dopants or oxygen will diffuse preferentially down the grain boundaries and react first at the grain boundary surfaces. Thin film solar cell devices based on the use of SnS have now been produced with efficiencies > 2%; these and other promising results indicate that it is most likely that devices with efficiencies > 10% will be produced in the near future. Given that tin layers are routinely coated in industry over large area substrates and that industrial sulphidization processes are also well established, the industrialization of this technology should be more straight forward than that encountered with the already commercialised cadmium telluride and copper indium gallium diselenide thin film technologies.This review discusses the chemical and physical properties of SnS, the methods of producing both bulk crystals and thin films of SnS, the literature available on studies of SnS-based photovoltaic solar cell devices, and progress made so far in developing this exciting new material.

Chemically Synthesized Ag-Doped Sns Films for Pv Applications

Ag‐doped PbS thin films by nebulizer spray pyrolysis for solar cells

Structural, optical and electrical properties of Ag doped PbS thin films: role of Ag concentration

SnS Films for Photovoltaic Applications: Physical Investigations on Sprayed SnxSy Films

Low Resistive Micrometer-Thick Sns : Ag Films For Optoelectronic Applications

Tailoring the structural, optical, and optoelectrical properties of innovative n-type Ag2ZnSnS4 thin films and investigating ITO/Ag2ZnSnS4/SnS/Au heterojunction

Boosting the Efficiency of SnS Solar Cells Through Reactively Sputter-Deposited Ag-Nanostructured Layer/SnO2 Film at Glancing Angles

Thin‐Film Solar Cells of an Indium‐Modified Silver Antimony Sulfide Selenide Absorber Prepared by Spray Pyrolysis

Mechanism and principle of doping: realizing of silver incorporation in CdS thin film via doping concentration effect

Optoelectrical properties of the ternary chalcogenide SnSb2S5 as a new absorber layer for photovoltaic application

Facile Synthesis and Characterization of PbS thin films doped with various Aluminum Concentrations for Photovoltaic Applications

Thiol-Free Synthesis of Bright Near-Infrared-Emitting Ag 2 S Nanocrystals through Heterovalent-Metal Decoration for Ecofriendly Solar Cells

Solution‐Crystalized AgBiS2 Films for Solar Cells Generating a Photo‐Current Density Over 31 mA cm−2

Photo sensing characteristics of Ag doped Sn2S3 thin films grown by economic nebulizer spray pyrolysis technique

Tuning of electronic properties of co-evaporated Ag:SnS thin films for heterojunction devices

Efficient electron injection in non-toxic silver sulfide (Ag2S) sensitized solar cells

Structural and Optical Studies on PVA Capped SnS Films Grown by Chemical Bath Deposition for Solar Cell Application

Al-doped ZnS Layers Synthesized by Solution Growth Method

Antimony sulfide thin films in chemically deposited thin film photovoltaic cells

SnS x Se 1– x /Ag Nanosheet Thin Films for Solar Energy Water Splitting

Thin Films Of Tin Sulphide For Application In Photovoltaic Solar Cells