Abstract:Binary data in 1T1C or 2T2C non-volatile ferroelectric random access memories, which are represented by the polarization charges of switching and non-switching events, are retrieved when a reading current pulse exceeds the sense amplifier threshold for discrimination of nonswitching pulses, and a reset pulse is required after the destructive readout. Downscaling the dimensions of such memory cells reduces the measurable polarization charge proportional to the capacitor area, and data are no longer detected reliably in high-density memories. The nondestructive readout of the binary information is possible from the high- and low-conductance bipolar switching of a ferroelectric diode under two opposite poling fields, where the direction of the diode effect switches with polarization reversal. Our study of BiFeO3 thin-film capacitors shows measured polarization-modulated diode currents for encoding information within high-density memories. We used two in-plane nano-electrodes fabricated on the film surface in gaps of a few tens of nanometers. As an in-plane field is applied antiparallel to the domain orientation above a coercive field, the partial domains near the film surface layer are switched firstly to form conductive charged walls with respect to the underlying unswitched bulk matrix, so that we can observed an "on" current from current-voltage loops. As the switching field is high enough, the underlying domains throughout the whole film thickness are switched. In this case, there was no charged domain wall, and thus, we observed an "off' current. Both "on" and "off' currents with the ratio of 100 are stable over laboratory time with write cycles larger than 2x10(5) and write time as short as 10 ns, which provide the proof of ferro-resistive switching and independent adjustments of ferroelectricity and conductivity in a single-phase ferroelectric in promotion of the integration density of the memory with high performance.

Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO3/Au Heterostructures with Strong Absorption Resonance*

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Electro–opto–mechano Driven Reversible Multi-State Memory Devices Based on Photocurrent in Bi0.9Eu0.1FeO3/La0.67Sr0.33MnO3/PMN-PT Heterostructures

Electro and Photon Double-Driven Non-Volatile and Non-Destructive Readout Memory in Pt/Bi0.9Eu0.1FeO3/Nb:SrTiO3 Heterostructures

Non-volatile Memory Based on the Ferroelectric Photovoltaic Effect

Thin film ferroelectric photonic-electronic memory

In-situ TEM Observation of Multilevel Storage Behavior in Low Power FeRAM Device

Double perovskite Bi2FeMnO6/TiO2 thin film heterostructure device for neuromorphic computing

An Optical/Ferroelectric Multiplexing Multidimensional Nonvolatile Memory from Ferroelectric Polymer

High‐Speed Optoelectronic Nonvolatile Memory Based on van der Waals Heterostructures

Multi-state Resistive Switching Memory with Secure Information Storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 Heterostructure

Improved Multibit Storage Reliability by Design of Ferroelectric Modulated Antiferroelectric Memory

A New Non-Destructive Readout by Using Photo-Recovered Surface Potential Contrast

Tunable Magnetoelectric Nonvolatile Memory Devices Based on SmFeO3/P(VDF-TrFE) Nanocomposite Films

Write-once-read-many-times memory device based on Pt/BiFeO3/LaNiO3 heterostructures

Ferroelectric thin films and electrodes for random access memories

High-Desity Nonvolatile Ferroelectric Resisitive Memory

Nonvolatile Electric‐Optical Memory Controlled by Conductive Filaments in Ti‐Doped BiFeO3

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Solid-Ionic Memory in a van der Waals Heterostructure

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure