Abstract:An ultralow specific ON-resistance (R-ON,R-sp) thin-silicon-on-insulator (SOI) LDMOS is proposed. Its ON-state and OFF-state mechanisms and thermal characteristic are investigated by simulation. It features an accumulation extended gate (AEG) structure on the surface and the AEG consists of a p-region and two integrated diodes. In the ON-state, the high density electron accumulation layer formed in the drift region surface provides an extremely low-resistance current path, which dramatically decreases the R-ON,R-sp and eases the dependence of R-ON,R-sp on the drift doping concentration (N-d). Meanwhile, the charge compensation effect between the drift region and the p-region of AEG allows a higher N-d value and then further decreases R-ON,R-sp. Consequently, the AEG contributes to an ultralow R-ON,R-sp owing to the accumulation layer and the charge compensation effect. On the other hand, the thin SOI of the proposed device adopts variable lateral doping (VLD) to realize high breakdown voltage (BV). Note that the intrinsic hotspot effect caused by the thin VLD SOI is overcome and, thus, the proposed device obtains a lower and evenly distributed surface temperature in the ON-state, owing to the accumulation layer along the drift region surface. Moreover, the two reverse biased diodes in the AEG sustain the gate-drain voltage in the ON-state and OFF-state, respectively, ensuring low current leakage and high BV. Therefore, compared with the VLD SOI LDMOS at the same dimensions, the proposed device not only decreases R-ON,R-sp by 65% and increases the BV by 7%, but also obtains an even surface temperature distribution and decreases the maximum surface temperature by 52 K at the same power density.

Ultralow ON-Resistance SOI LDMOS With Three Separated Gates and High- $k$ Dielectric

Novel Low- $k$ Dielectric Buried-Layer High-Voltage LDMOS on Partial SOI

Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

Low on-Resistance SOI Dual-Trench-Gate MOSFET

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study

Ultralow Specific On-Resistance Superjunction Vertical DMOS With High- Dielectric Pillar

Ultralow specific on-resistance high voltage LDMOS with a varible-K dielectric trench

A Novel Low Channel Resistance LDMOS with Planar and Trench Gates

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

An Improved SOI P-Channel LDMOS With High- ${k}$ Gate Dielectric and Dual Hole-Conductive Paths

High-Voltage Thin-Soi Ldmos with Ultralow On-Resistance and Even Temperature Characteristic

Ultra-low Specific On-Resistance SOI Double-Gate Trench-Type MOSFET

A RESURF-Enhanced P-Channel Trench SOI LDMOS with Ultralow Specific On-Resistance

Novel Low-Resistance Current Path UMOS with High-K Dielectric Pillars

Ultra-low Specific On-Resistance SOI High Voltage Trench LDMOS with Dielectric Field Enhancement Based on ENBULF Concept

Dual-Gate Lateral Double-Diffused Metal-Oxide Semiconductor with Ultra-Low Specific On-Resistance

An Ldmos with Large Soa and Low Specific On-Resistance

An L-Shaped Low On-Resistance Current Path Soi Ldmos with Dielectric Field Enhancement

An Improved SOI Trench LDMOST with Double Vertical High-K Insulator Pillars

Mechanism and Optimal Design of A High-K Dielectric Conduction Enhancement Soi Ldmos*

Ultralow ON-Resistance High-Voltage P-Channel LDMOS with an Accumulation-Effect Extended Gate